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Study of the Radiation Hardness Performance of PiN diodes for the ATLAS Pixel Detector at the SLHC upgrade
We study the radiation tolerance of the silicon and GaAs PiN diodes that will be the part of the readout system of the upgraded ATLAS pixel detector. The components were irradiated by 200 MeV protons up to total accumulated dose 1.2×1015 p/cm2 and by 24 GeV protons up to 2.6×1015 p/cm2. Based on obt...
| Autores principales: | , |
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| Lenguaje: | eng |
| Publicado: |
CERN
2009
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.5170/CERN-2009-006.390 http://cds.cern.ch/record/1235842 |