Radiation hardness studies of a 130 nm Silicon Germanium BiCMOS technology with a dedicated ASIC

We present the radiation hardness studies on the bipolar devices of the 130 nm 8WL Silicon Germanium (SiGe) BiCMOS technology from IBM. This technology has been proposed as one of the candidates for the Front-End (FE) readout chip of the upgraded Inner Detector (ID) and the Liquid Argon Calorimeter...

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Detalles Bibliográficos
Autores principales: Díez, S, Wilder, M, Ullán, M, Tazawa, Y, Sutton, A K, Spieler, H, Spencer, E, Seiden, A, Sadrozinski, H F W, Ruat, M, Rescia, S, Phillips, S, Newcomer, F M, Mayers, G, Martinez-McKinney, F, Mandić, I, Kononenko, W, Grillo, A A, Emerson, V, Dressnandt, N, Cressler, J D
Lenguaje:eng
Publicado: CERN 2009
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.5170/CERN-2009-006.439
http://cds.cern.ch/record/1235853
Descripción
Sumario:We present the radiation hardness studies on the bipolar devices of the 130 nm 8WL Silicon Germanium (SiGe) BiCMOS technology from IBM. This technology has been proposed as one of the candidates for the Front-End (FE) readout chip of the upgraded Inner Detector (ID) and the Liquid Argon Calorimeter (LAr) of the ATLAS Upgrade experiment. After neutron irradiations, devices remain at acceptable performances at the maximum radiation levels expected in the Si tracker and LAr calorimeter.

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