Radiation hardness studies of a 130 nm Silicon Germanium BiCMOS technology with a dedicated ASIC

We present the radiation hardness studies on the bipolar devices of the 130 nm 8WL Silicon Germanium (SiGe) BiCMOS technology from IBM. This technology has been proposed as one of the candidates for the Front-End (FE) readout chip of the upgraded Inner Detector (ID) and the Liquid Argon Calorimeter...

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Detalles Bibliográficos
Autores principales: Díez, S, Wilder, M, Ullán, M, Tazawa, Y, Sutton, A K, Spieler, H, Spencer, E, Seiden, A, Sadrozinski, H F W, Ruat, M, Rescia, S, Phillips, S, Newcomer, F M, Mayers, G, Martinez-McKinney, F, Mandić, I, Kononenko, W, Grillo, A A, Emerson, V, Dressnandt, N, Cressler, J D
Lenguaje:eng
Publicado: CERN 2009
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.5170/CERN-2009-006.439
http://cds.cern.ch/record/1235853
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author Díez, S
Wilder, M
Ullán, M
Tazawa, Y
Sutton, A K
Spieler, H
Spencer, E
Seiden, A
Sadrozinski, H F W
Ruat, M
Rescia, S
Phillips, S
Newcomer, F M
Mayers, G
Martinez-McKinney, F
Mandić, I
Kononenko, W
Grillo, A A
Emerson, V
Dressnandt, N
Cressler, J D
author_facet Díez, S
Wilder, M
Ullán, M
Tazawa, Y
Sutton, A K
Spieler, H
Spencer, E
Seiden, A
Sadrozinski, H F W
Ruat, M
Rescia, S
Phillips, S
Newcomer, F M
Mayers, G
Martinez-McKinney, F
Mandić, I
Kononenko, W
Grillo, A A
Emerson, V
Dressnandt, N
Cressler, J D
author_sort Díez, S
collection CERN
description We present the radiation hardness studies on the bipolar devices of the 130 nm 8WL Silicon Germanium (SiGe) BiCMOS technology from IBM. This technology has been proposed as one of the candidates for the Front-End (FE) readout chip of the upgraded Inner Detector (ID) and the Liquid Argon Calorimeter (LAr) of the ATLAS Upgrade experiment. After neutron irradiations, devices remain at acceptable performances at the maximum radiation levels expected in the Si tracker and LAr calorimeter.
id cern-1235853
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2009
publisher CERN
record_format invenio
spelling cern-12358532019-09-30T06:29:59Zdoi:10.5170/CERN-2009-006.439http://cds.cern.ch/record/1235853engDíez, SWilder, MUllán, MTazawa, YSutton, A KSpieler, HSpencer, ESeiden, ASadrozinski, H F WRuat, MRescia, SPhillips, SNewcomer, F MMayers, GMartinez-McKinney, FMandić, IKononenko, WGrillo, A AEmerson, VDressnandt, NCressler, J DRadiation hardness studies of a 130 nm Silicon Germanium BiCMOS technology with a dedicated ASICDetectors and Experimental TechniquesWe present the radiation hardness studies on the bipolar devices of the 130 nm 8WL Silicon Germanium (SiGe) BiCMOS technology from IBM. This technology has been proposed as one of the candidates for the Front-End (FE) readout chip of the upgraded Inner Detector (ID) and the Liquid Argon Calorimeter (LAr) of the ATLAS Upgrade experiment. After neutron irradiations, devices remain at acceptable performances at the maximum radiation levels expected in the Si tracker and LAr calorimeter.CERNoai:cds.cern.ch:12358532009
spellingShingle Detectors and Experimental Techniques
Díez, S
Wilder, M
Ullán, M
Tazawa, Y
Sutton, A K
Spieler, H
Spencer, E
Seiden, A
Sadrozinski, H F W
Ruat, M
Rescia, S
Phillips, S
Newcomer, F M
Mayers, G
Martinez-McKinney, F
Mandić, I
Kononenko, W
Grillo, A A
Emerson, V
Dressnandt, N
Cressler, J D
Radiation hardness studies of a 130 nm Silicon Germanium BiCMOS technology with a dedicated ASIC
title Radiation hardness studies of a 130 nm Silicon Germanium BiCMOS technology with a dedicated ASIC
title_full Radiation hardness studies of a 130 nm Silicon Germanium BiCMOS technology with a dedicated ASIC
title_fullStr Radiation hardness studies of a 130 nm Silicon Germanium BiCMOS technology with a dedicated ASIC
title_full_unstemmed Radiation hardness studies of a 130 nm Silicon Germanium BiCMOS technology with a dedicated ASIC
title_short Radiation hardness studies of a 130 nm Silicon Germanium BiCMOS technology with a dedicated ASIC
title_sort radiation hardness studies of a 130 nm silicon germanium bicmos technology with a dedicated asic
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.5170/CERN-2009-006.439
http://cds.cern.ch/record/1235853
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