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A 10-bit 40MS/s Pipelined ADC in a 0.13μm CMOS Process

This paper presents a 10-bit analogue to digital converter (ADC) that will be integrated in a general purpose charge readout ASIC that is the new generation of mixed-mode integrated circuits for Time Projection Chamber (TPC) readout. It is based on a pipelined structure with double sampling and was...

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Detalles Bibliográficos
Autor principal: França-Santos, Hugo
Lenguaje:eng
Publicado: CERN 2009
Materias:
Acceso en línea:https://dx.doi.org/10.5170/CERN-2009-006.452
http://cds.cern.ch/record/1235856
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author França-Santos, Hugo
author_facet França-Santos, Hugo
author_sort França-Santos, Hugo
collection CERN
description This paper presents a 10-bit analogue to digital converter (ADC) that will be integrated in a general purpose charge readout ASIC that is the new generation of mixed-mode integrated circuits for Time Projection Chamber (TPC) readout. It is based on a pipelined structure with double sampling and was implemented with switched capacitor circuits in eight 1.5-bit stages followed by a 2-bit stage. The power consumption is adjustable with the conversion rate and varies between 15 and 34mW for a 15 to 40MS/s conversion speed. The ADC occupies a silicon area of 0.7mm2 in a 0.13μm CMOS process and operates from a single 1.5V supply.
id cern-1235856
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2009
publisher CERN
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spelling cern-12358562019-09-30T06:29:59Zdoi:10.5170/CERN-2009-006.452http://cds.cern.ch/record/1235856engFrança-Santos, HugoA 10-bit 40MS/s Pipelined ADC in a 0.13μm CMOS ProcessDetectors and Experimental TechniquesThis paper presents a 10-bit analogue to digital converter (ADC) that will be integrated in a general purpose charge readout ASIC that is the new generation of mixed-mode integrated circuits for Time Projection Chamber (TPC) readout. It is based on a pipelined structure with double sampling and was implemented with switched capacitor circuits in eight 1.5-bit stages followed by a 2-bit stage. The power consumption is adjustable with the conversion rate and varies between 15 and 34mW for a 15 to 40MS/s conversion speed. The ADC occupies a silicon area of 0.7mm2 in a 0.13μm CMOS process and operates from a single 1.5V supply.CERNoai:cds.cern.ch:12358562009
spellingShingle Detectors and Experimental Techniques
França-Santos, Hugo
A 10-bit 40MS/s Pipelined ADC in a 0.13μm CMOS Process
title A 10-bit 40MS/s Pipelined ADC in a 0.13μm CMOS Process
title_full A 10-bit 40MS/s Pipelined ADC in a 0.13μm CMOS Process
title_fullStr A 10-bit 40MS/s Pipelined ADC in a 0.13μm CMOS Process
title_full_unstemmed A 10-bit 40MS/s Pipelined ADC in a 0.13μm CMOS Process
title_short A 10-bit 40MS/s Pipelined ADC in a 0.13μm CMOS Process
title_sort 10-bit 40ms/s pipelined adc in a 0.13μm cmos process
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.5170/CERN-2009-006.452
http://cds.cern.ch/record/1235856
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