Total dose effects on deep-submicron SOI technology for Monolithic Pixel Sensor development

We developed and characterized Monolithic pixel detectors in deep-submicron Fully Depleted (FD) Silicon On Insulator (SOI) technology. This paper presents the first studies of total dose effects from ionizing radiation performed on single transistor test structures. This work shows how the substrate...

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Detalles Bibliográficos
Autores principales: Mattiazzo, S, Battaglia, M, Bisello, D, Contarato, D, Denes, P, Giubilato, P, Pantano, D, Pozzobon, N, Tessaro, M, Wyss, J
Lenguaje:eng
Publicado: CERN 2009
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.5170/CERN-2009-006.591
http://cds.cern.ch/record/1236351
Descripción
Sumario:We developed and characterized Monolithic pixel detectors in deep-submicron Fully Depleted (FD) Silicon On Insulator (SOI) technology. This paper presents the first studies of total dose effects from ionizing radiation performed on single transistor test structures. This work shows how the substrate bias condition during irradiation heavily affects the resulting radiation damage.

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