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Low power discriminator for ATLAS pixel chip
The design of the front-end (FE) pixel electronics requires low power, low noise and low threshold dispersion. In this work, we propose a new architecture for the discriminator circuit. It is based on the principle of dynamic biasing and developed for the FE chip of the ATLAS pixel upgrade. This pap...
| Autores principales: | , , , , , , , , , , , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
CERN
2009
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.5170/CERN-2009-006.606 http://cds.cern.ch/record/1236357 |
| _version_ | 1780918572075188224 |
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| author | Menouni, M Arutinov, D Barbero, M Beccherle, R Dube, S Elledge, R Fougeron, D Garcia-Sciveres, M Gensolen, F Gnani, D Gromov, V Hemperek, T Karagounis, M Kluit, R Kruth, A Mekkaoui, A Rozanov, A Schipper, J D |
| author_facet | Menouni, M Arutinov, D Barbero, M Beccherle, R Dube, S Elledge, R Fougeron, D Garcia-Sciveres, M Gensolen, F Gnani, D Gromov, V Hemperek, T Karagounis, M Kluit, R Kruth, A Mekkaoui, A Rozanov, A Schipper, J D |
| author_sort | Menouni, M |
| collection | CERN |
| description | The design of the front-end (FE) pixel electronics requires low power, low noise and low threshold dispersion. In this work, we propose a new architecture for the discriminator circuit. It is based on the principle of dynamic biasing and developed for the FE chip of the ATLAS pixel upgrade. This paper presents two discriminator structures where the bias current depends on the presence of a signal at the input of the discriminator. Since the activity in the FE chip is very low, the power consumption is largely reduced allowing the material reduction in the B-layer. |
| id | cern-1236357 |
| institution | Organización Europea para la Investigación Nuclear |
| language | eng |
| publishDate | 2009 |
| publisher | CERN |
| record_format | invenio |
| spelling | cern-12363572019-09-30T06:29:59Zdoi:10.5170/CERN-2009-006.606http://cds.cern.ch/record/1236357engMenouni, MArutinov, DBarbero, MBeccherle, RDube, SElledge, RFougeron, DGarcia-Sciveres, MGensolen, FGnani, DGromov, VHemperek, TKaragounis, MKluit, RKruth, AMekkaoui, ARozanov, ASchipper, J DLow power discriminator for ATLAS pixel chipDetectors and Experimental TechniquesThe design of the front-end (FE) pixel electronics requires low power, low noise and low threshold dispersion. In this work, we propose a new architecture for the discriminator circuit. It is based on the principle of dynamic biasing and developed for the FE chip of the ATLAS pixel upgrade. This paper presents two discriminator structures where the bias current depends on the presence of a signal at the input of the discriminator. Since the activity in the FE chip is very low, the power consumption is largely reduced allowing the material reduction in the B-layer.CERNoai:cds.cern.ch:12363572009 |
| spellingShingle | Detectors and Experimental Techniques Menouni, M Arutinov, D Barbero, M Beccherle, R Dube, S Elledge, R Fougeron, D Garcia-Sciveres, M Gensolen, F Gnani, D Gromov, V Hemperek, T Karagounis, M Kluit, R Kruth, A Mekkaoui, A Rozanov, A Schipper, J D Low power discriminator for ATLAS pixel chip |
| title | Low power discriminator for ATLAS pixel chip |
| title_full | Low power discriminator for ATLAS pixel chip |
| title_fullStr | Low power discriminator for ATLAS pixel chip |
| title_full_unstemmed | Low power discriminator for ATLAS pixel chip |
| title_short | Low power discriminator for ATLAS pixel chip |
| title_sort | low power discriminator for atlas pixel chip |
| topic | Detectors and Experimental Techniques |
| url | https://dx.doi.org/10.5170/CERN-2009-006.606 http://cds.cern.ch/record/1236357 |
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