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Primary defect transformations in high-resistivity p-type silicon irradiated with electrons at cryogenic temperatures
It has been revealed that self-interstitials formed under low intensity electron irradiationin high resistivity p-type silicon can be retained frozen up to room temperature. Low thermal mobility of the self-interstitials suggests that Frenkelpair sinsilicon can be stable at temperatures of about or...
| Autores principales: | , , , , |
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| Lenguaje: | eng |
| Publicado: |
2009
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.physb.2009.08.101 http://cds.cern.ch/record/1262040 |