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Lattice location of the group V elements As and Sb in ZnO

The lattice locations of the potential p-type dopants arsenic and antimony in single-crystalline ZnO were studied by means of the electron emission channeling method following the implantation of radioactive 73As and 124Sb isotopes. The majority of the implanted As and Sb probe atoms was found to oc...

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Detalles Bibliográficos
Autores principales: Wahl, U, Correia, J G, Decoster, S, Mendonca, T
Lenguaje:eng
Publicado: 2009
Materias:
Acceso en línea:https://dx.doi.org/10.1016/j.physb.2009.08.174
http://cds.cern.ch/record/1262041
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author Wahl, U
Correia, J G
Decoster, S
Mendonca, T
author_facet Wahl, U
Correia, J G
Decoster, S
Mendonca, T
author_sort Wahl, U
collection CERN
description The lattice locations of the potential p-type dopants arsenic and antimony in single-crystalline ZnO were studied by means of the electron emission channeling method following the implantation of radioactive 73As and 124Sb isotopes. The majority of the implanted As and Sb probe atoms was found to occupy substitutional Zn sites, with the possible fraction on substitutional O sites being at maximum a few percent. The obtained results illustrate the difficulty in introducing oversized group V impurities on O sites and thus put further into question whether these elements may act as simple chemical dopants in ZnO.
id cern-1262041
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2009
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spelling cern-12620412019-09-30T06:29:59Zdoi:10.1016/j.physb.2009.08.174http://cds.cern.ch/record/1262041engWahl, UCorreia, J GDecoster, SMendonca, TLattice location of the group V elements As and Sb in ZnONuclear Physics - ExperimentCondensed MatterThe lattice locations of the potential p-type dopants arsenic and antimony in single-crystalline ZnO were studied by means of the electron emission channeling method following the implantation of radioactive 73As and 124Sb isotopes. The majority of the implanted As and Sb probe atoms was found to occupy substitutional Zn sites, with the possible fraction on substitutional O sites being at maximum a few percent. The obtained results illustrate the difficulty in introducing oversized group V impurities on O sites and thus put further into question whether these elements may act as simple chemical dopants in ZnO.CERN-OPEN-2014-001oai:cds.cern.ch:12620412009-07-20
spellingShingle Nuclear Physics - Experiment
Condensed Matter
Wahl, U
Correia, J G
Decoster, S
Mendonca, T
Lattice location of the group V elements As and Sb in ZnO
title Lattice location of the group V elements As and Sb in ZnO
title_full Lattice location of the group V elements As and Sb in ZnO
title_fullStr Lattice location of the group V elements As and Sb in ZnO
title_full_unstemmed Lattice location of the group V elements As and Sb in ZnO
title_short Lattice location of the group V elements As and Sb in ZnO
title_sort lattice location of the group v elements as and sb in zno
topic Nuclear Physics - Experiment
Condensed Matter
url https://dx.doi.org/10.1016/j.physb.2009.08.174
http://cds.cern.ch/record/1262041
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AT correiajg latticelocationofthegroupvelementsasandsbinzno
AT decosters latticelocationofthegroupvelementsasandsbinzno
AT mendoncat latticelocationofthegroupvelementsasandsbinzno