A TCT and annealing study on Magnetic Czochralski silicon detectors irradiated with neutrons and 24-GeV/c protons

Silicon diodes (pad detectors) were irradiated with 24GeV/c protons at the CERN PS IRRAD1 facility and with neutrons at the TRIGA reactor in Ljubljana (Slovenia). The diodes were realized on Magnetic Czochralski (MCz) grown silicon, of both n- and p-type. After irradiation, an annealing study with C...

Descripción completa

Detalles Bibliográficos
Autores principales: Pacifico, Nicola, Creanza, Donato, de Palma, Mauro, Manna, Norman, Kramberger, Gregor, Moll, Michael
Lenguaje:eng
Publicado: 2010
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2009.08.019
http://cds.cern.ch/record/1279393
Descripción
Sumario:Silicon diodes (pad detectors) were irradiated with 24GeV/c protons at the CERN PS IRRAD1 facility and with neutrons at the TRIGA reactor in Ljubljana (Slovenia). The diodes were realized on Magnetic Czochralski (MCz) grown silicon, of both n- and p-type. After irradiation, an annealing study with CV measurements was performed on 24GeV/c proton irradiated detectors, looking for hints of type inversion after irradiation and during annealing. Other pad detectors were studied using the TCT (transient current technique), to gather information about the field profile in the detector bulk and thus about the effective space charge distribution within it.

Ejemplares similares