Recent advances in the development of semiconductor detectors for very high luminosity colliders

For the luminosity upgrade of the LHC, the SLHC, the tracking systems of the LHC experiments need to be replaced. A main concern is the extreme radiation hardness requirement up to $1 x 10^{16} cm^{-2}$ 1 MeV neutron equivalent. This paper describes an extract of recent results on radiation hardening technologies developed within the RD50 Collaboration (http://www.cern.ch/rd50) [1] for the tracker upgrades. Silicon detectors have been designed and produced on n- and p-type wafers made by Float Zone, epitaxy and Czochralski technology. Their charge collection efficiency after proton, neutron and mixed irradiation has been studied. Novel detector concepts, as 3D detectors, have been designed, produced and studied as well. Radiation induced microscopic disorder has been also investigated and correlated with the performance degradation of irradiated detectors.