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A Serializer ASIC for High Speed Data Transmission in Cryogenic and HiRel Environment

A high speed 16:1 serializer ASIC has been developed using a commercial 0.25 μm silicon-on-sapphire CMOS technology. At room temperature the ASIC operates from 4.0 to 5.7 Gbps with power consumption of 463 mW. The total jitter is 62 ps at the bit error rate of 10-12 at 5 Gbps. A 200-MeV proton beam...

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Detalles Bibliográficos
Autor principal: Liu, T
Lenguaje:eng
Publicado: 2010
Materias:
Acceso en línea:http://cds.cern.ch/record/1316524
Descripción
Sumario:A high speed 16:1 serializer ASIC has been developed using a commercial 0.25 μm silicon-on-sapphire CMOS technology. At room temperature the ASIC operates from 4.0 to 5.7 Gbps with power consumption of 463 mW. The total jitter is 62 ps at the bit error rate of 10-12 at 5 Gbps. A 200-MeV proton beam test indicates that the ASIC is suitable for high energy physics applications. A liquid nitrogen temperature test indicates that the ASIC may be used at cryogenic temperature applications. The reliability of the serializer at liquid nitrogen temperature is to be studied. A 6-lane serializer array with 10 Gbps/lane with redundancy capability is under development.