Modelling radiation-effects in semiconductor lasers for use in SLHC experiments

Optical link components in the SLHC inner detectors are to be exposed to intense radiation fields during operation, and, hence, their qualification in terms of radiation tolerance is required. We have created a model that describes a semiconductor laser undergoing irradiation to enable the extrapolation to full lifetime total fluences from lower fluence radiation tests. This model uses a rate-equation approach with modified gain calculation that takes thermal rollover into account. The model is used to fit experimental data obtained during high-fluence (in excess of 1015 particles/cm2) neutron and pion irradiation tests and evaluate its prediction capability