Modelling radiation-effects in semiconductor lasers for use in SLHC experiments

Optical link components in the SLHC inner detectors are to be exposed to intense radiation fields during operation, and, hence, their qualification in terms of radiation tolerance is required. We have created a model that describes a semiconductor laser undergoing irradiation to enable the extrapola...

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Detalles Bibliográficos
Autores principales: Stejskal, P, Détraz, S, Papadopoulos, S, Papakonstantinou, I, Sigaud, C, Soos, A, Storey, S, Troska, J, Vasey, F
Lenguaje:eng
Publicado: 2010
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1088/1748-0221/5/12/C12033
http://cds.cern.ch/record/1321604
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author Stejskal, P
Détraz, S
Papadopoulos, S
Papakonstantinou, I
Sigaud, C
Soos, A
Storey, S
Troska, J
Vasey, F
author_facet Stejskal, P
Détraz, S
Papadopoulos, S
Papakonstantinou, I
Sigaud, C
Soos, A
Storey, S
Troska, J
Vasey, F
author_sort Stejskal, P
collection CERN
description Optical link components in the SLHC inner detectors are to be exposed to intense radiation fields during operation, and, hence, their qualification in terms of radiation tolerance is required. We have created a model that describes a semiconductor laser undergoing irradiation to enable the extrapolation to full lifetime total fluences from lower fluence radiation tests. This model uses a rate-equation approach with modified gain calculation that takes thermal rollover into account. The model is used to fit experimental data obtained during high-fluence (in excess of 1015 particles/cm2) neutron and pion irradiation tests and evaluate its prediction capability
id cern-1321604
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2010
record_format invenio
spelling cern-13216042019-09-30T06:29:59Zdoi:10.1088/1748-0221/5/12/C12033http://cds.cern.ch/record/1321604engStejskal, PDétraz, SPapadopoulos, SPapakonstantinou, ISigaud, CSoos, AStorey, STroska, JVasey, FModelling radiation-effects in semiconductor lasers for use in SLHC experimentsDetectors and Experimental TechniquesOptical link components in the SLHC inner detectors are to be exposed to intense radiation fields during operation, and, hence, their qualification in terms of radiation tolerance is required. We have created a model that describes a semiconductor laser undergoing irradiation to enable the extrapolation to full lifetime total fluences from lower fluence radiation tests. This model uses a rate-equation approach with modified gain calculation that takes thermal rollover into account. The model is used to fit experimental data obtained during high-fluence (in excess of 1015 particles/cm2) neutron and pion irradiation tests and evaluate its prediction capabilityoai:cds.cern.ch:13216042010
spellingShingle Detectors and Experimental Techniques
Stejskal, P
Détraz, S
Papadopoulos, S
Papakonstantinou, I
Sigaud, C
Soos, A
Storey, S
Troska, J
Vasey, F
Modelling radiation-effects in semiconductor lasers for use in SLHC experiments
title Modelling radiation-effects in semiconductor lasers for use in SLHC experiments
title_full Modelling radiation-effects in semiconductor lasers for use in SLHC experiments
title_fullStr Modelling radiation-effects in semiconductor lasers for use in SLHC experiments
title_full_unstemmed Modelling radiation-effects in semiconductor lasers for use in SLHC experiments
title_short Modelling radiation-effects in semiconductor lasers for use in SLHC experiments
title_sort modelling radiation-effects in semiconductor lasers for use in slhc experiments
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1088/1748-0221/5/12/C12033
http://cds.cern.ch/record/1321604
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