Fundamentals of RF and microwave transistor amplifiers

A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modelin...

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Detalles Bibliográficos
Autor principal: Bahl, Inder J
Lenguaje:eng
Publicado: John Wiley & Sons 2009
Materias:
Engineering
Acceso en línea:http://cds.cern.ch/record/1333733
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author Bahl, Inder J
author_facet Bahl, Inder J
author_sort Bahl, Inder J
collection CERN
description A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations. Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help read
id cern-1333733
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2009
publisher John Wiley & Sons
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spelling cern-13337332021-04-22T01:07:43Zhttp://cds.cern.ch/record/1333733engBahl, Inder JFundamentals of RF and microwave transistor amplifiersEngineeringA Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations. Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help readJohn Wiley & Sonsoai:cds.cern.ch:13337332009
spellingShingle Engineering
Bahl, Inder J
Fundamentals of RF and microwave transistor amplifiers
title Fundamentals of RF and microwave transistor amplifiers
title_full Fundamentals of RF and microwave transistor amplifiers
title_fullStr Fundamentals of RF and microwave transistor amplifiers
title_full_unstemmed Fundamentals of RF and microwave transistor amplifiers
title_short Fundamentals of RF and microwave transistor amplifiers
title_sort fundamentals of rf and microwave transistor amplifiers
topic Engineering
url http://cds.cern.ch/record/1333733
work_keys_str_mv AT bahlinderj fundamentalsofrfandmicrowavetransistoramplifiers

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