Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications

Ferroelectric thin films continue to attract much attention due to their developing, diverse applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties o...

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Detalles Bibliográficos
Autores principales: Okuyama, Masanori, Ishibashi, Yoshihiro
Lenguaje:eng
Publicado: Springer 2005
Materias:
Other Fields of Physics
Acceso en línea:https://dx.doi.org/10.1007/b99517
http://cds.cern.ch/record/1339213
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author Okuyama, Masanori
Ishibashi, Yoshihiro
author_facet Okuyama, Masanori
Ishibashi, Yoshihiro
author_sort Okuyama, Masanori
collection CERN
description Ferroelectric thin films continue to attract much attention due to their developing, diverse applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. All authors are acknowledged experts in the field.
id cern-1339213
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2005
publisher Springer
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spelling cern-13392132021-04-22T01:00:14Zdoi:10.1007/b99517http://cds.cern.ch/record/1339213engOkuyama, MasanoriIshibashi, YoshihiroFerroelectric Thin Films: Basic Properties and Device Physics for Memory ApplicationsOther Fields of PhysicsFerroelectric thin films continue to attract much attention due to their developing, diverse applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. All authors are acknowledged experts in the field.Springeroai:cds.cern.ch:13392132005
spellingShingle Other Fields of Physics
Okuyama, Masanori
Ishibashi, Yoshihiro
Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications
title Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications
title_full Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications
title_fullStr Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications
title_full_unstemmed Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications
title_short Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications
title_sort ferroelectric thin films: basic properties and device physics for memory applications
topic Other Fields of Physics
url https://dx.doi.org/10.1007/b99517
http://cds.cern.ch/record/1339213
work_keys_str_mv AT okuyamamasanori ferroelectricthinfilmsbasicpropertiesanddevicephysicsformemoryapplications
AT ishibashiyoshihiro ferroelectricthinfilmsbasicpropertiesanddevicephysicsformemoryapplications

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