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The k p Method: Electronic Properties of Semiconductors

This book presents a detailed exposition of the formalism and application of k.p theory for both bulk and nanostructured semiconductors. For bulk crystals, this is the first time all the major techniques for deriving the most popular Hamiltonians have been provided in one place. For nanostructures,...

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Detalles Bibliográficos
Autores principales: Willatzen, Morten, Lew Yan Voon, Lok C
Lenguaje:eng
Publicado: Springer 2009
Materias:
XX
Acceso en línea:https://dx.doi.org/10.1007/978-3-540-92872-0
http://cds.cern.ch/record/1339527
_version_ 1780922076743335936
author Willatzen, Morten
Lew Yan Voon, Lok C
author_facet Willatzen, Morten
Lew Yan Voon, Lok C
author_sort Willatzen, Morten
collection CERN
description This book presents a detailed exposition of the formalism and application of k.p theory for both bulk and nanostructured semiconductors. For bulk crystals, this is the first time all the major techniques for deriving the most popular Hamiltonians have been provided in one place. For nanostructures, this is the first time the Burt-Foreman theory has been made accessible. Thus, the reader will gain a clear understanding of the k.p method, will have an explicit listing of the various Hamiltonians in a consistent notation for their use, and a set of representative results. In addition, the reader can derive an excellent understanding of the electronic structure of semiconductors.
id cern-1339527
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2009
publisher Springer
record_format invenio
spelling cern-13395272021-04-22T00:57:00Zdoi:10.1007/978-3-540-92872-0http://cds.cern.ch/record/1339527engWillatzen, MortenLew Yan Voon, Lok CThe k p Method: Electronic Properties of SemiconductorsXXThis book presents a detailed exposition of the formalism and application of k.p theory for both bulk and nanostructured semiconductors. For bulk crystals, this is the first time all the major techniques for deriving the most popular Hamiltonians have been provided in one place. For nanostructures, this is the first time the Burt-Foreman theory has been made accessible. Thus, the reader will gain a clear understanding of the k.p method, will have an explicit listing of the various Hamiltonians in a consistent notation for their use, and a set of representative results. In addition, the reader can derive an excellent understanding of the electronic structure of semiconductors.Springeroai:cds.cern.ch:13395272009
spellingShingle XX
Willatzen, Morten
Lew Yan Voon, Lok C
The k p Method: Electronic Properties of Semiconductors
title The k p Method: Electronic Properties of Semiconductors
title_full The k p Method: Electronic Properties of Semiconductors
title_fullStr The k p Method: Electronic Properties of Semiconductors
title_full_unstemmed The k p Method: Electronic Properties of Semiconductors
title_short The k p Method: Electronic Properties of Semiconductors
title_sort k p method: electronic properties of semiconductors
topic XX
url https://dx.doi.org/10.1007/978-3-540-92872-0
http://cds.cern.ch/record/1339527
work_keys_str_mv AT willatzenmorten thekpmethodelectronicpropertiesofsemiconductors
AT lewyanvoonlokc thekpmethodelectronicpropertiesofsemiconductors
AT willatzenmorten kpmethodelectronicpropertiesofsemiconductors
AT lewyanvoonlokc kpmethodelectronicpropertiesofsemiconductors