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Physics of Ferroelectrics: A Modern Perspective

During the past two decades, revolutionary breakthroughs have occurred in the understanding of ferroelectric materials, both from the perspective of theory and experiment. First principles approaches, including the Berry phase formulation of ferroelectricity, now allow accurate, quantitative predict...

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Detalles Bibliográficos
Autores principales: Rabe, Karin M, Ahn, Charles H, Triscone, Jean-Marc
Lenguaje:eng
Publicado: Springer 2007
Materias:
XX
Acceso en línea:https://dx.doi.org/10.1007/978-3-540-34591-6
http://cds.cern.ch/record/1339643
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author Rabe, Karin M
Ahn, Charles H
Triscone, Jean-Marc
author_facet Rabe, Karin M
Ahn, Charles H
Triscone, Jean-Marc
author_sort Rabe, Karin M
collection CERN
description During the past two decades, revolutionary breakthroughs have occurred in the understanding of ferroelectric materials, both from the perspective of theory and experiment. First principles approaches, including the Berry phase formulation of ferroelectricity, now allow accurate, quantitative predictions of material properties, and single crystalline thin films are now available for fundamental studies of these materials. In addition, the need for high dielectric constant insulators and nonvolatile memories in semiconductor applications has motivated a renaissance in the investigation of these materials. This book addresses the paradigmatic shifts in understanding brought about by these breakthroughs, including the consideration of novel fabrication methods of single crystalline ferroelectric thin films and nanoscale applications of these materials, and new theoretical methods such as the effective Hamiltonian approach and density functional theory. A book for practicing scientists as well as graduate students.
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spelling cern-13396432021-04-22T00:55:52Zdoi:10.1007/978-3-540-34591-6http://cds.cern.ch/record/1339643engRabe, Karin MAhn, Charles HTriscone, Jean-MarcPhysics of Ferroelectrics: A Modern PerspectiveXXDuring the past two decades, revolutionary breakthroughs have occurred in the understanding of ferroelectric materials, both from the perspective of theory and experiment. First principles approaches, including the Berry phase formulation of ferroelectricity, now allow accurate, quantitative predictions of material properties, and single crystalline thin films are now available for fundamental studies of these materials. In addition, the need for high dielectric constant insulators and nonvolatile memories in semiconductor applications has motivated a renaissance in the investigation of these materials. This book addresses the paradigmatic shifts in understanding brought about by these breakthroughs, including the consideration of novel fabrication methods of single crystalline ferroelectric thin films and nanoscale applications of these materials, and new theoretical methods such as the effective Hamiltonian approach and density functional theory. A book for practicing scientists as well as graduate students.Springeroai:cds.cern.ch:13396432007
spellingShingle XX
Rabe, Karin M
Ahn, Charles H
Triscone, Jean-Marc
Physics of Ferroelectrics: A Modern Perspective
title Physics of Ferroelectrics: A Modern Perspective
title_full Physics of Ferroelectrics: A Modern Perspective
title_fullStr Physics of Ferroelectrics: A Modern Perspective
title_full_unstemmed Physics of Ferroelectrics: A Modern Perspective
title_short Physics of Ferroelectrics: A Modern Perspective
title_sort physics of ferroelectrics: a modern perspective
topic XX
url https://dx.doi.org/10.1007/978-3-540-34591-6
http://cds.cern.ch/record/1339643
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