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Front end electronics for silicon strip detectors in 90-nm CMOS technology: Advantages and challenges

Detalles Bibliográficos
Autores principales: Kaplon, J, Noy, M
Publicado: 2010
Materias:
Acceso en línea:https://dx.doi.org/10.1088/1748-0221/5/11/C11024
http://cds.cern.ch/record/1352698
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author Kaplon, J
Noy, M
author_facet Kaplon, J
Noy, M
author_sort Kaplon, J
collection CERN
id cern-1352698
institution Organización Europea para la Investigación Nuclear
publishDate 2010
record_format invenio
spelling cern-13526982019-09-30T06:29:59Zdoi:10.1088/1748-0221/5/11/C11024http://cds.cern.ch/record/1352698Kaplon, JNoy, MFront end electronics for silicon strip detectors in 90-nm CMOS technology: Advantages and challengesDetectors and Experimental Techniquesoai:cds.cern.ch:13526982010
spellingShingle Detectors and Experimental Techniques
Kaplon, J
Noy, M
Front end electronics for silicon strip detectors in 90-nm CMOS technology: Advantages and challenges
title Front end electronics for silicon strip detectors in 90-nm CMOS technology: Advantages and challenges
title_full Front end electronics for silicon strip detectors in 90-nm CMOS technology: Advantages and challenges
title_fullStr Front end electronics for silicon strip detectors in 90-nm CMOS technology: Advantages and challenges
title_full_unstemmed Front end electronics for silicon strip detectors in 90-nm CMOS technology: Advantages and challenges
title_short Front end electronics for silicon strip detectors in 90-nm CMOS technology: Advantages and challenges
title_sort front end electronics for silicon strip detectors in 90-nm cmos technology: advantages and challenges
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1088/1748-0221/5/11/C11024
http://cds.cern.ch/record/1352698
work_keys_str_mv AT kaplonj frontendelectronicsforsiliconstripdetectorsin90nmcmostechnologyadvantagesandchallenges
AT noym frontendelectronicsforsiliconstripdetectorsin90nmcmostechnologyadvantagesandchallenges