TID and Displacement Damage Effects in Vertical and Lateral Power MOSFETs for Integrated DC-DC Converters

TID and displacement damage effects are studied for vertical and lateral power MOSFETs in five different technologies in view of the development of radiation-tolerant fully integrated DC-DC converters. Investigation is pushed to the very high level of radiation expected for an upgrade to the LHC exp...

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Detalles Bibliográficos
Autores principales: Faccio, F, Blanchot, G, Michelis, S, Faccio, Federico, Fuentes, C, Allongue, B, Sorge, R, Orlandi, S
Lenguaje:eng
Publicado: 2010
Materias:
Engineering
Acceso en línea:https://dx.doi.org/10.1109/TNS.2010.2049584
http://cds.cern.ch/record/1359301

Internet

https://dx.doi.org/10.1109/TNS.2010.2049584
http://cds.cern.ch/record/1359301

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