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Fully on-chip switched capacitor NMOS low dropout voltage regulator
This paper presents a 1.5 V 50 mA low dropout voltage (LDO) regulator using an NMOS transistor as the output pass element. Continuous time,operation of the LDO is achieved using a new switched floating capacitor scheme that raises the gate voltage of the pass element. The regulator has a 0.2 V dropo...
Autores principales: | , , , |
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Lenguaje: | eng |
Publicado: |
2010
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1007/s10470-009-9439-y http://cds.cern.ch/record/1359314 |
_version_ | 1780922627217424384 |
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author | Camacho, D Gui, Ping Camacho, Daniel Moreira, Paulo |
author_facet | Camacho, D Gui, Ping Camacho, Daniel Moreira, Paulo |
author_sort | Camacho, D |
collection | CERN |
description | This paper presents a 1.5 V 50 mA low dropout voltage (LDO) regulator using an NMOS transistor as the output pass element. Continuous time,operation of the LDO is achieved using a new switched floating capacitor scheme that raises the gate voltage of the pass element. The regulator has a 0.2 V dropout at a 50 mA load and is stable for a wide load current range with loading capacitances up to 50 pF. The output variation when a full load step is applied is 300 mV and the recovery time is below 0.3 mu s. it is designed in a 0.13 mu m CMOS process with an area of 0.008 mm(2) and its operation does not require any external component. |
id | cern-1359314 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2010 |
record_format | invenio |
spelling | cern-13593142019-09-30T06:29:59Zdoi:10.1007/s10470-009-9439-yhttp://cds.cern.ch/record/1359314engCamacho, DGui, PingCamacho, DanielMoreira, PauloFully on-chip switched capacitor NMOS low dropout voltage regulatorInformation Transfer and ManagementThis paper presents a 1.5 V 50 mA low dropout voltage (LDO) regulator using an NMOS transistor as the output pass element. Continuous time,operation of the LDO is achieved using a new switched floating capacitor scheme that raises the gate voltage of the pass element. The regulator has a 0.2 V dropout at a 50 mA load and is stable for a wide load current range with loading capacitances up to 50 pF. The output variation when a full load step is applied is 300 mV and the recovery time is below 0.3 mu s. it is designed in a 0.13 mu m CMOS process with an area of 0.008 mm(2) and its operation does not require any external component.oai:cds.cern.ch:13593142010 |
spellingShingle | Information Transfer and Management Camacho, D Gui, Ping Camacho, Daniel Moreira, Paulo Fully on-chip switched capacitor NMOS low dropout voltage regulator |
title | Fully on-chip switched capacitor NMOS low dropout voltage regulator |
title_full | Fully on-chip switched capacitor NMOS low dropout voltage regulator |
title_fullStr | Fully on-chip switched capacitor NMOS low dropout voltage regulator |
title_full_unstemmed | Fully on-chip switched capacitor NMOS low dropout voltage regulator |
title_short | Fully on-chip switched capacitor NMOS low dropout voltage regulator |
title_sort | fully on-chip switched capacitor nmos low dropout voltage regulator |
topic | Information Transfer and Management |
url | https://dx.doi.org/10.1007/s10470-009-9439-y http://cds.cern.ch/record/1359314 |
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