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Vectors and submicron precision: redundancy and 3D stacking in silicon pixel detectors

Measurements are shown of GeV pions and muons in two 300 mu m thick, Si Medipix pixel detector assemblies that are stacked on top of each other, with a 25 mu m thick brass foil in between. In such a radiation imaging semiconductor matrix with a large number of pixels along the particle trail, one ca...

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Detalles Bibliográficos
Autores principales: Heijne, E H M, Tlustos, L, Wong, W, Idarraga, J, Visser, J, Jakubek, J, Leroy, C, Turecek, D, Visschers, J, Pospisil, S, Ballabriga, R, Vykydal, Z, Vermeulen, J, Plackett, R, Llopart, X, Boltje, D, Campbell, M
Lenguaje:eng
Publicado: 2010
Materias:
Acceso en línea:https://dx.doi.org/10.1088/1748-0221/5/06/C06004
http://cds.cern.ch/record/1359325
Descripción
Sumario:Measurements are shown of GeV pions and muons in two 300 mu m thick, Si Medipix pixel detector assemblies that are stacked on top of each other, with a 25 mu m thick brass foil in between. In such a radiation imaging semiconductor matrix with a large number of pixels along the particle trail, one can determine local space vectors for the particle trajectory instead of points. This improves pattern recognition and track reconstruction, especially in a crowded environment. Stacking of sensor planes is essential for resolving directional ambiguities. Signal charge sharing can be employed for measuring positions with submicron precision. In the measurements one notices accompanying `delta' electrons that emerge outside the particle trail, far beyond the boundaries of the 55 mu m pixel cells. The frequency of such corrupted position measurements is similar to one per 2.5mm of traversed Si.