Pre-requisites for the formation of unusual diffusion profiles in II-VI semiconductors

The diffusion of the impurities Cu, Ag, Au, and Na in CdTe and CdZnTe exhibits the unusual phenomenon of uphill diffusion if the diffusion of the impurity is performed under external Cd pressure at temperatures typically in the range 700-900 K. A model is proposed that describes these concentration...

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Detalles Bibliográficos
Autores principales: Wolf, H, Wichert, Th, Kronenberg, J, Wagner, F, ISOLDE Collaboration
Lenguaje:eng
Publicado: 2010
Materias:
Condensed Matter
Acceso en línea:https://dx.doi.org/10.1002/pssb.200983222
http://cds.cern.ch/record/1359340
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author Wolf, H
Wichert, Th
Kronenberg, J
Wagner, F
ISOLDE Collaboration
author_facet Wolf, H
Wichert, Th
Kronenberg, J
Wagner, F
ISOLDE Collaboration
author_sort Wolf, H
collection CERN
description The diffusion of the impurities Cu, Ag, Au, and Na in CdTe and CdZnTe exhibits the unusual phenomenon of uphill diffusion if the diffusion of the impurity is performed under external Cd pressure at temperatures typically in the range 700-900 K. A model is proposed that describes these concentration profiles quantitatively and yields pre-requisites for the observation of uphill diffusion. If a metal layer is evaporated onto the implanted surface, the diffusion of the impurity is strongly affected by the generation of intrinsic defects at the metal-semiconductor interface. (C) 2010 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim
id cern-1359340
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2010
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spelling cern-13593402019-09-30T06:29:59Zdoi:10.1002/pssb.200983222http://cds.cern.ch/record/1359340engWolf, HWichert, ThKronenberg, JWagner, FISOLDE CollaborationPre-requisites for the formation of unusual diffusion profiles in II-VI semiconductorsCondensed MatterThe diffusion of the impurities Cu, Ag, Au, and Na in CdTe and CdZnTe exhibits the unusual phenomenon of uphill diffusion if the diffusion of the impurity is performed under external Cd pressure at temperatures typically in the range 700-900 K. A model is proposed that describes these concentration profiles quantitatively and yields pre-requisites for the observation of uphill diffusion. If a metal layer is evaporated onto the implanted surface, the diffusion of the impurity is strongly affected by the generation of intrinsic defects at the metal-semiconductor interface. (C) 2010 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheimoai:cds.cern.ch:13593402010
spellingShingle Condensed Matter
Wolf, H
Wichert, Th
Kronenberg, J
Wagner, F
ISOLDE Collaboration
Pre-requisites for the formation of unusual diffusion profiles in II-VI semiconductors
title Pre-requisites for the formation of unusual diffusion profiles in II-VI semiconductors
title_full Pre-requisites for the formation of unusual diffusion profiles in II-VI semiconductors
title_fullStr Pre-requisites for the formation of unusual diffusion profiles in II-VI semiconductors
title_full_unstemmed Pre-requisites for the formation of unusual diffusion profiles in II-VI semiconductors
title_short Pre-requisites for the formation of unusual diffusion profiles in II-VI semiconductors
title_sort pre-requisites for the formation of unusual diffusion profiles in ii-vi semiconductors
topic Condensed Matter
url https://dx.doi.org/10.1002/pssb.200983222
http://cds.cern.ch/record/1359340
work_keys_str_mv AT wolfh prerequisitesfortheformationofunusualdiffusionprofilesiniivisemiconductors
AT wichertth prerequisitesfortheformationofunusualdiffusionprofilesiniivisemiconductors
AT kronenbergj prerequisitesfortheformationofunusualdiffusionprofilesiniivisemiconductors
AT wagnerf prerequisitesfortheformationofunusualdiffusionprofilesiniivisemiconductors
AT isoldecollaboration prerequisitesfortheformationofunusualdiffusionprofilesiniivisemiconductors

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