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International Conference on application of high magnetic fields in semiconductor physics

Detalles Bibliográficos
Autor principal: Landwehr, G
Lenguaje:eng
Publicado: Springer 1983
Materias:
XX
Acceso en línea:https://dx.doi.org/10.1007/3-540-11996-5
http://cds.cern.ch/record/1391699
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author Landwehr, G
author_facet Landwehr, G
author_sort Landwehr, G
collection CERN
id cern-1391699
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1983
publisher Springer
record_format invenio
spelling cern-13916992021-04-25T17:09:48Zdoi:10.1007/3-540-11996-5http://cds.cern.ch/record/1391699engLandwehr, GInternational Conference on application of high magnetic fields in semiconductor physicsXXSpringeroai:cds.cern.ch:13916991983
spellingShingle XX
Landwehr, G
International Conference on application of high magnetic fields in semiconductor physics
title International Conference on application of high magnetic fields in semiconductor physics
title_full International Conference on application of high magnetic fields in semiconductor physics
title_fullStr International Conference on application of high magnetic fields in semiconductor physics
title_full_unstemmed International Conference on application of high magnetic fields in semiconductor physics
title_short International Conference on application of high magnetic fields in semiconductor physics
title_sort international conference on application of high magnetic fields in semiconductor physics
topic XX
url https://dx.doi.org/10.1007/3-540-11996-5
http://cds.cern.ch/record/1391699
work_keys_str_mv AT landwehrg internationalconferenceonapplicationofhighmagneticfieldsinsemiconductorphysics