Tests of monolithic pixel detectors in SOI technology with depleted substrate

This paper reviews the R\&D program on monolithic pixel sensors in silicon-on-insulator technology carried out by LBNL, the University and INFN, Padova and SCIPP-UCSC. The main issues addressed by the R\&D, back-gating and radiation tolerance, are discussed together with the preliminary resu...

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Detalles Bibliográficos
Autores principales: Giubilato, P, Bisello, D, Contarato, D, Kim, T S, Denes, P, Pantano, D, Zalusky, S, Pozzobon, N, Mattiazzo, S, Battaglia, M, Tindall, C S
Lenguaje:eng
Publicado: 2011
Materias:
Detectors and Experimental Techniques
Nuclear Physics - XX
XX
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2010.11.185
http://cds.cern.ch/record/1399685
Descripción
Sumario:This paper reviews the R\&D program on monolithic pixel sensors in silicon-on-insulator technology carried out by LBNL, the University and INFN, Padova and SCIPP-UCSC. The main issues addressed by the R\&D, back-gating and radiation tolerance, are discussed together with the preliminary results from the characterization of the latest chip in this technology. (C) 2010 Elsevier B.V. All rights reserved.

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