Tests of monolithic pixel detectors in SOI technology with depleted substrate

This paper reviews the R\&D program on monolithic pixel sensors in silicon-on-insulator technology carried out by LBNL, the University and INFN, Padova and SCIPP-UCSC. The main issues addressed by the R\&D, back-gating and radiation tolerance, are discussed together with the preliminary resu...

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Detalles Bibliográficos
Autores principales: Giubilato, P, Bisello, D, Contarato, D, Kim, T S, Denes, P, Pantano, D, Zalusky, S, Pozzobon, N, Mattiazzo, S, Battaglia, M, Tindall, C S
Lenguaje:eng
Publicado: 2011
Materias:
Detectors and Experimental Techniques
Nuclear Physics - XX
XX
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2010.11.185
http://cds.cern.ch/record/1399685
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author Giubilato, P
Bisello, D
Contarato, D
Kim, T S
Denes, P
Pantano, D
Zalusky, S
Pozzobon, N
Mattiazzo, S
Battaglia, M
Tindall, C S
author_facet Giubilato, P
Bisello, D
Contarato, D
Kim, T S
Denes, P
Pantano, D
Zalusky, S
Pozzobon, N
Mattiazzo, S
Battaglia, M
Tindall, C S
author_sort Giubilato, P
collection CERN
description This paper reviews the R\&D program on monolithic pixel sensors in silicon-on-insulator technology carried out by LBNL, the University and INFN, Padova and SCIPP-UCSC. The main issues addressed by the R\&D, back-gating and radiation tolerance, are discussed together with the preliminary results from the characterization of the latest chip in this technology. (C) 2010 Elsevier B.V. All rights reserved.
id cern-1399685
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2011
record_format invenio
spelling cern-13996852019-09-30T06:29:59Zdoi:10.1016/j.nima.2010.11.185http://cds.cern.ch/record/1399685engGiubilato, PBisello, DContarato, DKim, T SDenes, PPantano, DZalusky, SPozzobon, NMattiazzo, SBattaglia, MTindall, C STests of monolithic pixel detectors in SOI technology with depleted substrateDetectors and Experimental TechniquesNuclear Physics - XXXXThis paper reviews the R\&D program on monolithic pixel sensors in silicon-on-insulator technology carried out by LBNL, the University and INFN, Padova and SCIPP-UCSC. The main issues addressed by the R\&D, back-gating and radiation tolerance, are discussed together with the preliminary results from the characterization of the latest chip in this technology. (C) 2010 Elsevier B.V. All rights reserved.oai:cds.cern.ch:13996852011
spellingShingle Detectors and Experimental Techniques
Nuclear Physics - XX
XX
Giubilato, P
Bisello, D
Contarato, D
Kim, T S
Denes, P
Pantano, D
Zalusky, S
Pozzobon, N
Mattiazzo, S
Battaglia, M
Tindall, C S
Tests of monolithic pixel detectors in SOI technology with depleted substrate
title Tests of monolithic pixel detectors in SOI technology with depleted substrate
title_full Tests of monolithic pixel detectors in SOI technology with depleted substrate
title_fullStr Tests of monolithic pixel detectors in SOI technology with depleted substrate
title_full_unstemmed Tests of monolithic pixel detectors in SOI technology with depleted substrate
title_short Tests of monolithic pixel detectors in SOI technology with depleted substrate
title_sort tests of monolithic pixel detectors in soi technology with depleted substrate
topic Detectors and Experimental Techniques
Nuclear Physics - XX
XX
url https://dx.doi.org/10.1016/j.nima.2010.11.185
http://cds.cern.ch/record/1399685
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