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The Effect of Magnetic Field on Readout of Diodes Used as NIEL Counters
Voltage measurement at a given forward current in dedicated dosimetric diodes is used to monitor displacement damage in silicon caused by energetic hadrons in the LHC experiments. The diodes operate in a strong magnetic field which influences their performance. In this work, measurements of the effe...
Autores principales: | , , , , , , , , , , |
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Lenguaje: | eng |
Publicado: |
2011
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1109/TNS.2010.2097277 http://cds.cern.ch/record/1399764 |
_version_ | 1780923619716628480 |
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author | Mandic, I Mikuz, M Franz, S Hartert, J Glaser, M Gorisek, A Ravotti, F Sersa, I Kramberger, G Dolenc, I Cindro, V |
author_facet | Mandic, I Mikuz, M Franz, S Hartert, J Glaser, M Gorisek, A Ravotti, F Sersa, I Kramberger, G Dolenc, I Cindro, V |
author_sort | Mandic, I |
collection | CERN |
description | Voltage measurement at a given forward current in dedicated dosimetric diodes is used to monitor displacement damage in silicon caused by energetic hadrons in the LHC experiments. The diodes operate in a strong magnetic field which influences their performance. In this work, measurements of the effect of the magnetic field on two types of devices: high sensitivity CMRP diodes and commercial BPW34F silicon p-i-n diodes are presented. Our results show that the magnetic field effects are manageable and will not significantly deteriorate the performance of the displacement damage measurements. |
id | cern-1399764 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2011 |
record_format | invenio |
spelling | cern-13997642019-09-30T06:29:59Zdoi:10.1109/TNS.2010.2097277http://cds.cern.ch/record/1399764engMandic, IMikuz, MFranz, SHartert, JGlaser, MGorisek, ARavotti, FSersa, IKramberger, GDolenc, ICindro, VThe Effect of Magnetic Field on Readout of Diodes Used as NIEL CountersXXNuclear Physics - XXVoltage measurement at a given forward current in dedicated dosimetric diodes is used to monitor displacement damage in silicon caused by energetic hadrons in the LHC experiments. The diodes operate in a strong magnetic field which influences their performance. In this work, measurements of the effect of the magnetic field on two types of devices: high sensitivity CMRP diodes and commercial BPW34F silicon p-i-n diodes are presented. Our results show that the magnetic field effects are manageable and will not significantly deteriorate the performance of the displacement damage measurements.oai:cds.cern.ch:13997642011 |
spellingShingle | XX Nuclear Physics - XX Mandic, I Mikuz, M Franz, S Hartert, J Glaser, M Gorisek, A Ravotti, F Sersa, I Kramberger, G Dolenc, I Cindro, V The Effect of Magnetic Field on Readout of Diodes Used as NIEL Counters |
title | The Effect of Magnetic Field on Readout of Diodes Used as NIEL Counters |
title_full | The Effect of Magnetic Field on Readout of Diodes Used as NIEL Counters |
title_fullStr | The Effect of Magnetic Field on Readout of Diodes Used as NIEL Counters |
title_full_unstemmed | The Effect of Magnetic Field on Readout of Diodes Used as NIEL Counters |
title_short | The Effect of Magnetic Field on Readout of Diodes Used as NIEL Counters |
title_sort | effect of magnetic field on readout of diodes used as niel counters |
topic | XX Nuclear Physics - XX |
url | https://dx.doi.org/10.1109/TNS.2010.2097277 http://cds.cern.ch/record/1399764 |
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