Characterisation of a GaAs(Cr) Medipix2 hybrid pixel detector

A semi-insulating GaAs(Cr) sensor of 300 pm thickness with a bulk resistivity of 10(9) Omega cm and no guard ring structures has been bump bonded to a Medipix2 readout chip. The room temperature spectroscopic response of this device to fluorescence photons in the energy range from 8 to 28 key at dif...

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Detalles Bibliográficos
Autores principales: Tlustos, L, Tolbanov, O P, Shelkov, G
Lenguaje:eng
Publicado: 2011
Materias:
Detectors and Experimental Techniques
Nuclear Physics - XX
XX
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2010.06.137
http://cds.cern.ch/record/1399796
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author Tlustos, L
Tolbanov, O P
Shelkov, G
author_facet Tlustos, L
Tolbanov, O P
Shelkov, G
author_sort Tlustos, L
collection CERN
description A semi-insulating GaAs(Cr) sensor of 300 pm thickness with a bulk resistivity of 10(9) Omega cm and no guard ring structures has been bump bonded to a Medipix2 readout chip. The room temperature spectroscopic response of this device to fluorescence photons in the energy range from 8 to 28 key at different sensor biases is measured and compared to the response of a reference detector with a 300 mu m thick Si sensor. The measured responses show that the full volume of the GaAs(Cr) is active and indicate a charge collection efficiency of 90\%. The spatial resolution if this device is 8 lp/mm. (c) 2010 Elsevier B.V. All rights reserved.
id cern-1399796
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2011
record_format invenio
spelling cern-13997962019-09-30T06:29:59Zdoi:10.1016/j.nima.2010.06.137http://cds.cern.ch/record/1399796engTlustos, LTolbanov, O PShelkov, GCharacterisation of a GaAs(Cr) Medipix2 hybrid pixel detectorDetectors and Experimental TechniquesNuclear Physics - XXXXA semi-insulating GaAs(Cr) sensor of 300 pm thickness with a bulk resistivity of 10(9) Omega cm and no guard ring structures has been bump bonded to a Medipix2 readout chip. The room temperature spectroscopic response of this device to fluorescence photons in the energy range from 8 to 28 key at different sensor biases is measured and compared to the response of a reference detector with a 300 mu m thick Si sensor. The measured responses show that the full volume of the GaAs(Cr) is active and indicate a charge collection efficiency of 90\%. The spatial resolution if this device is 8 lp/mm. (c) 2010 Elsevier B.V. All rights reserved.oai:cds.cern.ch:13997962011
spellingShingle Detectors and Experimental Techniques
Nuclear Physics - XX
XX
Tlustos, L
Tolbanov, O P
Shelkov, G
Characterisation of a GaAs(Cr) Medipix2 hybrid pixel detector
title Characterisation of a GaAs(Cr) Medipix2 hybrid pixel detector
title_full Characterisation of a GaAs(Cr) Medipix2 hybrid pixel detector
title_fullStr Characterisation of a GaAs(Cr) Medipix2 hybrid pixel detector
title_full_unstemmed Characterisation of a GaAs(Cr) Medipix2 hybrid pixel detector
title_short Characterisation of a GaAs(Cr) Medipix2 hybrid pixel detector
title_sort characterisation of a gaas(cr) medipix2 hybrid pixel detector
topic Detectors and Experimental Techniques
Nuclear Physics - XX
XX
url https://dx.doi.org/10.1016/j.nima.2010.06.137
http://cds.cern.ch/record/1399796
work_keys_str_mv AT tlustosl characterisationofagaascrmedipix2hybridpixeldetector
AT tolbanovop characterisationofagaascrmedipix2hybridpixeldetector
AT shelkovg characterisationofagaascrmedipix2hybridpixeldetector

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