Tracking efficiency and charge sharing of 3D silicon sensors at different angles in a 1.4T magnetic field

A 3D silicon sensor fabricated at Stanford with electrodes penetrating throughout the entire silicon wafer and with active edges was tested in a 1.4 T magnetic field with a 180 GeV/c pion beam at the CERN SPS in May 2009. The device under test was bump-bonded to the ATLAS pixel FE-I3 readout electro...

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Detalles Bibliográficos
Autores principales: Gjersdal, H, Rivero, F, Slaviec, T, Sandaker, H, Tsung, J, Bolle, E, Da Via, C, Wermes, N, Borri, M, Grinstein, S, Nordahl, P, Hugging, F, Dorholt, O, Rohne, O, La Rosa, A, Sjobaek, K, Tsybychev, D, Mastroberardino, A, Fazio, S, Su, D, Young, C, Hasi, J, Grenier, P, Hansson, P, Jackson, P, Kenney, C, Kocian, M
Lenguaje:eng
Publicado: 2011
Materias:
Detectors and Experimental Techniques
Nuclear Physics - XX
XX
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2010.04.083
http://cds.cern.ch/record/1399812

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