3D silicon pixel sensors: Recent test beam results

The 3D silicon sensors aimed for the ATLAS pixel detector upgrade have been tested with a high energy pion beam at the CERN SPS in 2009. Two types of sensor layouts were tested: full-3D assemblies fabricated in Stanford, where the electrodes penetrate the entire silicon wafer thickness, and modified...

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Detalles Bibliográficos
Autores principales: Hansson, P, Gjersdal, H, Sandaker, H, Korolkov, I, Barrera, C, Wermes, N, Borri, M, Grinstein, S, Troyano, I, Grenier, P, Devetak, E, Fleta, C, Kenney, C, Tsybychev, D, Nellist, C, Chmeissan, M, Su, D, DeWilde, B, Silverstein, D, Dorholt, O, Tsung, J, Sjoebaek, K, Stupak, J, Slaviec, T, Micelli, A, Helle, K, Bolle, E, Huegging, F, Kocian, M, Fazio, S, Balbuena, J, Dalla Betta, G F, La Rosa, A, Rivero, F, Mastroberardino, A, Hasi, J, Darbo, G, Boscardin, M, Da Via, C, Nordahl, P, Giordani, M, Jackson, P, Rohne, O, Gemme, C, Young, C
Lenguaje:eng
Publicado: 2011
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2010.06.321
http://cds.cern.ch/record/1399865
Descripción
Sumario:The 3D silicon sensors aimed for the ATLAS pixel detector upgrade have been tested with a high energy pion beam at the CERN SPS in 2009. Two types of sensor layouts were tested: full-3D assemblies fabricated in Stanford, where the electrodes penetrate the entire silicon wafer thickness, and modified-3D assemblies fabricated at FBK-irst with partially overlapping electrodes. In both cases three read-out electrodes are ganged together to form pixels of dimension 50 x 400 mu m(2). Data on the pulse height distribution, tracking efficiency and resolution were collected for various particle incident angles, with and without a 1.6 T magnetic field. Data from a planar sensor of the type presently used in the ATLAS detector were used at the same time to give comparison. Published by Elsevier B.V.

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