Overview of Silicon Pixel Sensor Development for the ATLAS Insertable B-Layer (IBL)

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The ATLAS Pixel Detector is the innermost part of the ATLAS tracking system and is critical for track and vertex reconstruction. In order to preserve the tracking performance notwithstanding the increasing instantaneous luminosity delivered by the LHC, ATLAS plans to introduce a new pixel layer (IBL...

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Autor principal: Grinstein, S
Lenguaje:eng
Publicado: 2011
Materias:
Detectors and Experimental Techniques
Acceso en línea:http://cds.cern.ch/record/1404152
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author Grinstein, S
author_facet Grinstein, S
author_sort Grinstein, S
collection CERN
description The ATLAS Pixel Detector is the innermost part of the ATLAS tracking system and is critical for track and vertex reconstruction. In order to preserve the tracking performance notwithstanding the increasing instantaneous luminosity delivered by the LHC, ATLAS plans to introduce a new pixel layer (IBL) mounted directly on a reduced diameter beam pipe. The IBL will have to sustain an estimated radiation dose, including safety factors, of $5 imes 10^{15}$~n$_{eq}$/cm$^2$. Two sensor technologies are currently being considered for the IBL, planar n-on-n slim edge and 3D double sided designs. Results of the characterization, irradiation and beam test studies of IBL pixel devices are presented.
id cern-1404152
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2011
record_format invenio
spelling cern-14041522019-09-30T06:29:59Zhttp://cds.cern.ch/record/1404152engGrinstein, SOverview of Silicon Pixel Sensor Development for the ATLAS Insertable B-Layer (IBL)Detectors and Experimental TechniquesThe ATLAS Pixel Detector is the innermost part of the ATLAS tracking system and is critical for track and vertex reconstruction. In order to preserve the tracking performance notwithstanding the increasing instantaneous luminosity delivered by the LHC, ATLAS plans to introduce a new pixel layer (IBL) mounted directly on a reduced diameter beam pipe. The IBL will have to sustain an estimated radiation dose, including safety factors, of $5 imes 10^{15}$~n$_{eq}$/cm$^2$. Two sensor technologies are currently being considered for the IBL, planar n-on-n slim edge and 3D double sided designs. Results of the characterization, irradiation and beam test studies of IBL pixel devices are presented.ATL-INDET-PROC-2011-042oai:cds.cern.ch:14041522011-12-03
spellingShingle Detectors and Experimental Techniques
Grinstein, S
Overview of Silicon Pixel Sensor Development for the ATLAS Insertable B-Layer (IBL)
title Overview of Silicon Pixel Sensor Development for the ATLAS Insertable B-Layer (IBL)
title_full Overview of Silicon Pixel Sensor Development for the ATLAS Insertable B-Layer (IBL)
title_fullStr Overview of Silicon Pixel Sensor Development for the ATLAS Insertable B-Layer (IBL)
title_full_unstemmed Overview of Silicon Pixel Sensor Development for the ATLAS Insertable B-Layer (IBL)
title_short Overview of Silicon Pixel Sensor Development for the ATLAS Insertable B-Layer (IBL)
title_sort overview of silicon pixel sensor development for the atlas insertable b-layer (ibl)
topic Detectors and Experimental Techniques
url http://cds.cern.ch/record/1404152
work_keys_str_mv AT grinsteins overviewofsiliconpixelsensordevelopmentfortheatlasinsertableblayeribl

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