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Characterization of proton irradiated 3D-DDTC pixel sensor prototypes fabricated at FBK
In this paper we discuss results relevant to 3D Double-Side Double Type Column (3D-DDTC) pixel sensors fabricated at FBK (Trento, Italy) and oriented to the ATLAS upgrade. Some assemblies of these sensors featuring different columnar electrode configurations (2, 3, or 4 columns per pixel) and couple...
Autores principales: | , , , , , , , , , , , , , , |
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Lenguaje: | eng |
Publicado: |
2011
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2012.03.048 http://cds.cern.ch/record/1406992 |
_version_ | 1780923790118617088 |
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author | La Rosa, A. Boscardin, M. Cobal, M. Dalla Betta, G.F. Da Via, C. Darbo, G. Gallrapp, C. Gemme, C. Huegging, F. Janssen, J. Micelli, A. Pernegger, H. Povoli, M. Wermes, N. Zorzi, N. |
author_facet | La Rosa, A. Boscardin, M. Cobal, M. Dalla Betta, G.F. Da Via, C. Darbo, G. Gallrapp, C. Gemme, C. Huegging, F. Janssen, J. Micelli, A. Pernegger, H. Povoli, M. Wermes, N. Zorzi, N. |
author_sort | La Rosa, A. |
collection | CERN |
description | In this paper we discuss results relevant to 3D Double-Side Double Type Column (3D-DDTC) pixel sensors fabricated at FBK (Trento, Italy) and oriented to the ATLAS upgrade. Some assemblies of these sensors featuring different columnar electrode configurations (2, 3, or 4 columns per pixel) and coupled to the ATLAS FEI3 read-out chip were irradiated up to large proton fluences and tested in laboratory with radioactive sources. In spite of the non optimized columnar electrode overlap, sensors exhibit reasonably good charge collection properties up to an irradiation fluence of 2 x 10**15 neq/cm2, while requiring bias voltages in the order of 100 V. Sensor operation is further investigated by means of TCAD simulations which can effectively explain the basic mechanisms responsible for charge loss after irradiation. |
id | cern-1406992 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2011 |
record_format | invenio |
spelling | cern-14069922022-02-23T03:16:29Zdoi:10.1016/j.nima.2012.03.048http://cds.cern.ch/record/1406992engLa Rosa, A.Boscardin, M.Cobal, M.Dalla Betta, G.F.Da Via, C.Darbo, G.Gallrapp, C.Gemme, C.Huegging, F.Janssen, J.Micelli, A.Pernegger, H.Povoli, M.Wermes, N.Zorzi, N.Characterization of proton irradiated 3D-DDTC pixel sensor prototypes fabricated at FBKDetectors and Experimental TechniquesIn this paper we discuss results relevant to 3D Double-Side Double Type Column (3D-DDTC) pixel sensors fabricated at FBK (Trento, Italy) and oriented to the ATLAS upgrade. Some assemblies of these sensors featuring different columnar electrode configurations (2, 3, or 4 columns per pixel) and coupled to the ATLAS FEI3 read-out chip were irradiated up to large proton fluences and tested in laboratory with radioactive sources. In spite of the non optimized columnar electrode overlap, sensors exhibit reasonably good charge collection properties up to an irradiation fluence of 2 x 10**15 neq/cm2, while requiring bias voltages in the order of 100 V. Sensor operation is further investigated by means of TCAD simulations which can effectively explain the basic mechanisms responsible for charge loss after irradiation.In this paper we discuss results relevant to 3D Double-Side Double Type Column (3D-DDTC) pixel sensors fabricated at FBK (Trento, Italy) and oriented to the ATLAS upgrade. Some assemblies of these sensors featuring different columnar electrode configurations (2, 3, or 4 columns per pixel) and coupled to the ATLAS FEI3 read-out chip were irradiated up to large proton fluences and tested in laboratory with radioactive sources. In spite of the non optimized columnar electrode overlap, sensors exhibit reasonably good charge collection properties up to an irradiation fluence of 2 x 10**15 neq/cm2, while requiring bias voltages in the order of 100 V. Sensor operation is further investigated by means of TCAD simulations which can effectively explain the basic mechanisms responsible for charge loss after irradiation.arXiv:1112.2854oai:cds.cern.ch:14069922011-12-14 |
spellingShingle | Detectors and Experimental Techniques La Rosa, A. Boscardin, M. Cobal, M. Dalla Betta, G.F. Da Via, C. Darbo, G. Gallrapp, C. Gemme, C. Huegging, F. Janssen, J. Micelli, A. Pernegger, H. Povoli, M. Wermes, N. Zorzi, N. Characterization of proton irradiated 3D-DDTC pixel sensor prototypes fabricated at FBK |
title | Characterization of proton irradiated 3D-DDTC pixel sensor prototypes fabricated at FBK |
title_full | Characterization of proton irradiated 3D-DDTC pixel sensor prototypes fabricated at FBK |
title_fullStr | Characterization of proton irradiated 3D-DDTC pixel sensor prototypes fabricated at FBK |
title_full_unstemmed | Characterization of proton irradiated 3D-DDTC pixel sensor prototypes fabricated at FBK |
title_short | Characterization of proton irradiated 3D-DDTC pixel sensor prototypes fabricated at FBK |
title_sort | characterization of proton irradiated 3d-ddtc pixel sensor prototypes fabricated at fbk |
topic | Detectors and Experimental Techniques |
url | https://dx.doi.org/10.1016/j.nima.2012.03.048 http://cds.cern.ch/record/1406992 |
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