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Characterization of proton irradiated 3D-DDTC pixel sensor prototypes fabricated at FBK

In this paper we discuss results relevant to 3D Double-Side Double Type Column (3D-DDTC) pixel sensors fabricated at FBK (Trento, Italy) and oriented to the ATLAS upgrade. Some assemblies of these sensors featuring different columnar electrode configurations (2, 3, or 4 columns per pixel) and couple...

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Detalles Bibliográficos
Autores principales: La Rosa, A., Boscardin, M., Cobal, M., Dalla Betta, G.F., Da Via, C., Darbo, G., Gallrapp, C., Gemme, C., Huegging, F., Janssen, J., Micelli, A., Pernegger, H., Povoli, M., Wermes, N., Zorzi, N.
Lenguaje:eng
Publicado: 2011
Materias:
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2012.03.048
http://cds.cern.ch/record/1406992
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author La Rosa, A.
Boscardin, M.
Cobal, M.
Dalla Betta, G.F.
Da Via, C.
Darbo, G.
Gallrapp, C.
Gemme, C.
Huegging, F.
Janssen, J.
Micelli, A.
Pernegger, H.
Povoli, M.
Wermes, N.
Zorzi, N.
author_facet La Rosa, A.
Boscardin, M.
Cobal, M.
Dalla Betta, G.F.
Da Via, C.
Darbo, G.
Gallrapp, C.
Gemme, C.
Huegging, F.
Janssen, J.
Micelli, A.
Pernegger, H.
Povoli, M.
Wermes, N.
Zorzi, N.
author_sort La Rosa, A.
collection CERN
description In this paper we discuss results relevant to 3D Double-Side Double Type Column (3D-DDTC) pixel sensors fabricated at FBK (Trento, Italy) and oriented to the ATLAS upgrade. Some assemblies of these sensors featuring different columnar electrode configurations (2, 3, or 4 columns per pixel) and coupled to the ATLAS FEI3 read-out chip were irradiated up to large proton fluences and tested in laboratory with radioactive sources. In spite of the non optimized columnar electrode overlap, sensors exhibit reasonably good charge collection properties up to an irradiation fluence of 2 x 10**15 neq/cm2, while requiring bias voltages in the order of 100 V. Sensor operation is further investigated by means of TCAD simulations which can effectively explain the basic mechanisms responsible for charge loss after irradiation.
id cern-1406992
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2011
record_format invenio
spelling cern-14069922022-02-23T03:16:29Zdoi:10.1016/j.nima.2012.03.048http://cds.cern.ch/record/1406992engLa Rosa, A.Boscardin, M.Cobal, M.Dalla Betta, G.F.Da Via, C.Darbo, G.Gallrapp, C.Gemme, C.Huegging, F.Janssen, J.Micelli, A.Pernegger, H.Povoli, M.Wermes, N.Zorzi, N.Characterization of proton irradiated 3D-DDTC pixel sensor prototypes fabricated at FBKDetectors and Experimental TechniquesIn this paper we discuss results relevant to 3D Double-Side Double Type Column (3D-DDTC) pixel sensors fabricated at FBK (Trento, Italy) and oriented to the ATLAS upgrade. Some assemblies of these sensors featuring different columnar electrode configurations (2, 3, or 4 columns per pixel) and coupled to the ATLAS FEI3 read-out chip were irradiated up to large proton fluences and tested in laboratory with radioactive sources. In spite of the non optimized columnar electrode overlap, sensors exhibit reasonably good charge collection properties up to an irradiation fluence of 2 x 10**15 neq/cm2, while requiring bias voltages in the order of 100 V. Sensor operation is further investigated by means of TCAD simulations which can effectively explain the basic mechanisms responsible for charge loss after irradiation.In this paper we discuss results relevant to 3D Double-Side Double Type Column (3D-DDTC) pixel sensors fabricated at FBK (Trento, Italy) and oriented to the ATLAS upgrade. Some assemblies of these sensors featuring different columnar electrode configurations (2, 3, or 4 columns per pixel) and coupled to the ATLAS FEI3 read-out chip were irradiated up to large proton fluences and tested in laboratory with radioactive sources. In spite of the non optimized columnar electrode overlap, sensors exhibit reasonably good charge collection properties up to an irradiation fluence of 2 x 10**15 neq/cm2, while requiring bias voltages in the order of 100 V. Sensor operation is further investigated by means of TCAD simulations which can effectively explain the basic mechanisms responsible for charge loss after irradiation.arXiv:1112.2854oai:cds.cern.ch:14069922011-12-14
spellingShingle Detectors and Experimental Techniques
La Rosa, A.
Boscardin, M.
Cobal, M.
Dalla Betta, G.F.
Da Via, C.
Darbo, G.
Gallrapp, C.
Gemme, C.
Huegging, F.
Janssen, J.
Micelli, A.
Pernegger, H.
Povoli, M.
Wermes, N.
Zorzi, N.
Characterization of proton irradiated 3D-DDTC pixel sensor prototypes fabricated at FBK
title Characterization of proton irradiated 3D-DDTC pixel sensor prototypes fabricated at FBK
title_full Characterization of proton irradiated 3D-DDTC pixel sensor prototypes fabricated at FBK
title_fullStr Characterization of proton irradiated 3D-DDTC pixel sensor prototypes fabricated at FBK
title_full_unstemmed Characterization of proton irradiated 3D-DDTC pixel sensor prototypes fabricated at FBK
title_short Characterization of proton irradiated 3D-DDTC pixel sensor prototypes fabricated at FBK
title_sort characterization of proton irradiated 3d-ddtc pixel sensor prototypes fabricated at fbk
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1016/j.nima.2012.03.048
http://cds.cern.ch/record/1406992
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