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Performance of novel silicon n-in-p planar Pixel Sensors
The performance of novel n-in-p planar pixel detectors, designed for future upgrades of the ATLAS Pixel system is presented. The n-in-p silicon sensors technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness, that allow for enlarging the area...
| Autores principales: | , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2011
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2012.03.029 http://cds.cern.ch/record/1409683 |