Cargando…

Comparison of impurity defect structures formed by ion implantations in amorphous and crystalline silicon

Detalles Bibliográficos
Autores principales:	Weyer, G, Damgaard, S, Petersen, J W, Heinemeier, J
Lenguaje:	eng
Publicado:	1982
Materias:	Other Fields of Physics
Acceso en línea:	https://dx.doi.org/10.1016/0167-5087(82)90250-2 http://cds.cern.ch/record/142454

Ejemplares similares

Sn impurity defects in germanium from ion implantations of radioactive $^{119}$In
por: Weyer, G, et al.
Publicado: (1980)

Mössbauer study of a complex Sn-impurity defect in GaAs from implantations of radioactive $^{119}$In ions
por: Weyer, G, et al.
Publicado: (1980)

Mössbauer study of $^{119}$Sn defects in silicon from ion implantations of radioactive $^{119}$In
por: Weyer, G, et al.
Publicado: (1980)

Mössbauer Study of a Complex $^{119}Sn$ Impurity Defect in GaP
por: Weyer, G, et al.
Publicado: (1980)

Radiogenic Sn impurity defects in germanium
por: Damgaard, S, et al.
Publicado: (1981)

A Mössbauer study of impurity-vacancy defects in copper
por: Andreasen, H, et al.
Publicado: (1982)

Site selective doping of compound semiconductors by ion implantation of radioactive nuclei
por: Weyer, G, et al.
Publicado: (1980)

Radiogenic Sn defects in ion implanted InP
por: Damgaard, S, et al.
Publicado: (1981)

Defect-impurity formation at high donor concentrations in silicon
por: Nylandsted-Larsen, A, et al.
Publicado: (1992)

Mossbauer study of /sup 119/Sn defects in silicon from ion implantations of radioactive /sup 119/In
por: Weyer, G, et al.
Publicado: (1980)

The tin-vacancy pair defect in silicon
por: Damgaard, S, et al.
Publicado: (1981)

Mossbauer study of a complex /sup 119/Sn impurity-defect in gallium phosphide
por: Weyer, G, et al.
Publicado: (1980)

Internal oxidation of 5sp-impurities in nobel metals
por: Andreasen, H, et al.
Publicado: (1985)

Isomer shifts and force constants of substitutional $^{119}$Sn impurity atoms in f.c.c. metals
por: Andreasen, H, et al.
Publicado: (1983)

On the formation of highly symmetric impurity-vacancy clusters in ion-implanted f.c.c. metals
por: Lindner, G, et al.
Publicado: (1987)

Hyperfine interaction of Eu impurities implanted in nickel
por: Niessen, L, et al.
Publicado: (1990)

Direct evidence for substitutional ion-implanted indium dopants in silicon
por: Lindner, G, et al.
Publicado: (1986)

Systematic experimental and theoretical studies of the lattice vibrations of host atoms and substitutional Sn impurities in III-V semiconductors
por: Nielsen, O H, et al.
Publicado: (1982)

Defect recovery of ion implanted InP
por: Weyer, G
Publicado: (1994)

Mössbauer studies of defects in ion implanted metals and semiconductors
por: Weyer, G
Publicado: (1988)

Defect structures in ion-implanted InSb
por: Weyer, G, et al.
Publicado: (1986)

The nature of radiogenic Sn defects in group-IV elements
por: Weyer, G, et al.
Publicado: (1981)

Impurity-defect complexes in ion-implanted aluminium
por: Pedersen, F T, et al.
Publicado: (1986)

Combined Mössbauer and PAC investigation of impurity-defect complexes in ion-implanted GaP and GaAs
por: Nielsen, K B
Publicado: (1985)

High resolution conversion spectroscopy of impurities in semiconductors
por: Petersen, J W, et al.
Publicado: (1992)

Diffusion of ion implanted Sn and Sb in heavily doped silicon
por: Andersen, P E, et al.
Publicado: (1988)

Hyperfine interactions of impurities in defect sites in ion-implanted metals
por: Weyer, G
Publicado: (1988)

$^{119}$Sn Mössbauer study of the implantation behaviour of $^{119}$In, $^{119}$Sn, $^{119m}$Sn, $^{119}$Sb and $^{119m}$Te ions in SiC
por: Petersen, J W, et al.
Publicado: (1985)

Low fluence implantations in GaAs: a Mössbauer spectroscopy investigation of individual and overlapping defect cascades
por: Andreasen, H, et al.
Publicado: (1992)

Rapid thermal annealing of ion-implanted Sb in silicon: a comparison of substitutional fractions from channeling, electrical and Mössbauer measurements
por: Nylandsted-Larsen, A, et al.
Publicado: (1985)

Magnetic hyperfine fields of 5sp impurities in vacancy complexes in ferromagnetic metals
por: Weyer, G
Publicado: (1989)

Optical properties of crystalline and amorphous semiconductors: materials and fundamental principles
por: Adachi, Sadao
Publicado: (1999)

Annealing behaviour of high concentration of implanted Sb and Sn in silicon
por: Weyer, G, et al.
Publicado: (1986)

Crystal defects and crystalline interfaces
por: Bollmann, W
Publicado: (1970)

Workshop on Applications of Synchrotron Radiation to Trace Impurity Analysis for Advanced Silicon Processing
por: Laderman, S S, et al.
Publicado: (1993)

Applications of Mössbauer spectroscopy to investigations of defects in semiconductors
por: Nylandsted-Larsen, A, et al.
Publicado: (1988)

Electron-positron-channelling and Mössbauer-effect studies of indium-vacancy complexes in ion-implanted nickel
por: Besold, B, et al.
Publicado: (1986)

Mössbauer study of defects created by low-fluence In.suP(+) implantations in InP
por: Kringhøj, P, et al.
Publicado: (1993)

Mössbauer study of the formation of impurity-vacancy complexes in copper
por: Andreasen, H, et al.
Publicado: (1983)

Diffusion of groups IV and V impurities in silicon at high donor concentrations: a comparison between experimental and theoretical results
por: Kyllesbech-Larsen, K, et al.
Publicado: (1990)

Cannot write session to /tmp/vufind_sessions/sess_lqn0thh2o3qdi7l6lj884hben8