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Metal-dielectric interfaces in gigascale electronics: thermal and electrical stability

Metal-dielectric interfaces are ubiquitous in modern electronics. As advanced gigascale electronic devices continue to shrink, the stability of these interfaces is becoming an increasingly important issue that has a profound impact on the operational reliability of these devices. In this book, the a...

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Detalles Bibliográficos
Autores principales: He, Ming, Lu, Toh-Ming
Lenguaje:eng
Publicado: Springer 2012
Materias:
Acceso en línea:https://dx.doi.org/10.1007/978-1-4614-1812-2
http://cds.cern.ch/record/1432981
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author He, Ming
Lu, Toh-Ming
author_facet He, Ming
Lu, Toh-Ming
author_sort He, Ming
collection CERN
description Metal-dielectric interfaces are ubiquitous in modern electronics. As advanced gigascale electronic devices continue to shrink, the stability of these interfaces is becoming an increasingly important issue that has a profound impact on the operational reliability of these devices. In this book, the authors present the basic science underlying  the thermal and electrical stability of metal-dielectric interfaces and its relationship to the operation of advanced interconnect systems in gigascale electronics. Interface phenomena, including chemical reactions between metals and dielectrics, metallic-atom diffusion, and ion drift, are discussed based on fundamental physical and chemical principles. Schematic diagrams are provided throughout the book to illustrate  interface phenomena and the principles that govern them. Metal-Dielectric Interfaces in Gigascale Electronics  provides a unifying approach to the diverse and sometimes contradictory test results that are reported in the literature on metal-dielectric interfaces. The goal is to provide readers with a clear account of the relationship between interface science and its applications in interconnect structures. The material presented here will also be of interest to those engaged in field-effect transistor and memristor device research, as well as university researchers and industrial scientists working in the areas of electronic materials processing, semiconductor manufacturing, memory chips, and IC design.   Presents a unified approach to understanding the diverse phenomena observed at metal-dielectric interfaces Features fundamental considerations in the physics and chemistry of metal-dielectric interactions Explores mechanisms of metal atom diffusion and metal ion drift in dielectrics Provides keys to understanding reliability in gigascale electronics Focuses on a dynamic area of current research that is a foundation of future interconnect systems, memristors, and solid-state electrolyte devices Presents a unified approach to understanding the diverse phenomena observed at metal-dielectric interfaces
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spelling cern-14329812021-04-22T00:36:20Zdoi:10.1007/978-1-4614-1812-2http://cds.cern.ch/record/1432981engHe, MingLu, Toh-MingMetal-dielectric interfaces in gigascale electronics: thermal and electrical stabilityEngineeringMetal-dielectric interfaces are ubiquitous in modern electronics. As advanced gigascale electronic devices continue to shrink, the stability of these interfaces is becoming an increasingly important issue that has a profound impact on the operational reliability of these devices. In this book, the authors present the basic science underlying  the thermal and electrical stability of metal-dielectric interfaces and its relationship to the operation of advanced interconnect systems in gigascale electronics. Interface phenomena, including chemical reactions between metals and dielectrics, metallic-atom diffusion, and ion drift, are discussed based on fundamental physical and chemical principles. Schematic diagrams are provided throughout the book to illustrate  interface phenomena and the principles that govern them. Metal-Dielectric Interfaces in Gigascale Electronics  provides a unifying approach to the diverse and sometimes contradictory test results that are reported in the literature on metal-dielectric interfaces. The goal is to provide readers with a clear account of the relationship between interface science and its applications in interconnect structures. The material presented here will also be of interest to those engaged in field-effect transistor and memristor device research, as well as university researchers and industrial scientists working in the areas of electronic materials processing, semiconductor manufacturing, memory chips, and IC design.   Presents a unified approach to understanding the diverse phenomena observed at metal-dielectric interfaces Features fundamental considerations in the physics and chemistry of metal-dielectric interactions Explores mechanisms of metal atom diffusion and metal ion drift in dielectrics Provides keys to understanding reliability in gigascale electronics Focuses on a dynamic area of current research that is a foundation of future interconnect systems, memristors, and solid-state electrolyte devices Presents a unified approach to understanding the diverse phenomena observed at metal-dielectric interfacesSpringeroai:cds.cern.ch:14329812012
spellingShingle Engineering
He, Ming
Lu, Toh-Ming
Metal-dielectric interfaces in gigascale electronics: thermal and electrical stability
title Metal-dielectric interfaces in gigascale electronics: thermal and electrical stability
title_full Metal-dielectric interfaces in gigascale electronics: thermal and electrical stability
title_fullStr Metal-dielectric interfaces in gigascale electronics: thermal and electrical stability
title_full_unstemmed Metal-dielectric interfaces in gigascale electronics: thermal and electrical stability
title_short Metal-dielectric interfaces in gigascale electronics: thermal and electrical stability
title_sort metal-dielectric interfaces in gigascale electronics: thermal and electrical stability
topic Engineering
url https://dx.doi.org/10.1007/978-1-4614-1812-2
http://cds.cern.ch/record/1432981
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