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Evaluation of 65nm technology for CLIC pixel front-end
The CLIC vertex detector design requires a high single point resolution (~ 3 μm) and a precise time stamp (≤ 10 ns). In order to achieve this spatial resolution, small pixels (in the order of 20 μm pitch) must be used, together with the measurement of the charge deposition of neighbouring channels....
Autores principales: | , , , , |
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Lenguaje: | eng |
Publicado: |
2011
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Materias: | |
Acceso en línea: | http://cds.cern.ch/record/1443493 |
_version_ | 1780924716348866560 |
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author | Valerio, P Bonacini, S Ballabriga, R Campbell, M Llopart, X |
author_facet | Valerio, P Bonacini, S Ballabriga, R Campbell, M Llopart, X |
author_sort | Valerio, P |
collection | CERN |
description | The CLIC vertex detector design requires a high single point resolution (~ 3 μm) and a precise time stamp (≤ 10 ns). In order to achieve this spatial resolution, small pixels (in the order of 20 μm pitch) must be used, together with the measurement of the charge deposition of neighbouring channels. Designing such small pixels requires the use of a deep downscaled CMOS technology. This note describes the design and characterisation of suitable building blocks implemented in a commercial 65 nm process. The characterisation included an evaluation of the radiation hardness of the blocks. |
id | cern-1443493 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2011 |
record_format | invenio |
spelling | cern-14434932019-09-30T06:29:59Zhttp://cds.cern.ch/record/1443493engValerio, PBonacini, SBallabriga, RCampbell, MLlopart, XEvaluation of 65nm technology for CLIC pixel front-endParticle Physics - Experiment The CLIC vertex detector design requires a high single point resolution (~ 3 μm) and a precise time stamp (≤ 10 ns). In order to achieve this spatial resolution, small pixels (in the order of 20 μm pitch) must be used, together with the measurement of the charge deposition of neighbouring channels. Designing such small pixels requires the use of a deep downscaled CMOS technology. This note describes the design and characterisation of suitable building blocks implemented in a commercial 65 nm process. The characterisation included an evaluation of the radiation hardness of the blocks.LCD-Note-2011-022oai:cds.cern.ch:14434932011 |
spellingShingle | Particle Physics - Experiment Valerio, P Bonacini, S Ballabriga, R Campbell, M Llopart, X Evaluation of 65nm technology for CLIC pixel front-end |
title | Evaluation of 65nm technology for CLIC pixel front-end |
title_full | Evaluation of 65nm technology for CLIC pixel front-end |
title_fullStr | Evaluation of 65nm technology for CLIC pixel front-end |
title_full_unstemmed | Evaluation of 65nm technology for CLIC pixel front-end |
title_short | Evaluation of 65nm technology for CLIC pixel front-end |
title_sort | evaluation of 65nm technology for clic pixel front-end |
topic | Particle Physics - Experiment |
url | http://cds.cern.ch/record/1443493 |
work_keys_str_mv | AT valeriop evaluationof65nmtechnologyforclicpixelfrontend AT bonacinis evaluationof65nmtechnologyforclicpixelfrontend AT ballabrigar evaluationof65nmtechnologyforclicpixelfrontend AT campbellm evaluationof65nmtechnologyforclicpixelfrontend AT llopartx evaluationof65nmtechnologyforclicpixelfrontend |