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Evaluation of 65nm technology for CLIC pixel front-end

The CLIC vertex detector design requires a high single point resolution (~ 3 μm) and a precise time stamp (≤ 10 ns). In order to achieve this spatial resolution, small pixels (in the order of 20 μm pitch) must be used, together with the measurement of the charge deposition of neighbouring channels....

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Detalles Bibliográficos
Autores principales: Valerio, P, Bonacini, S, Ballabriga, R, Campbell, M, Llopart, X
Lenguaje:eng
Publicado: 2011
Materias:
Acceso en línea:http://cds.cern.ch/record/1443493
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author Valerio, P
Bonacini, S
Ballabriga, R
Campbell, M
Llopart, X
author_facet Valerio, P
Bonacini, S
Ballabriga, R
Campbell, M
Llopart, X
author_sort Valerio, P
collection CERN
description The CLIC vertex detector design requires a high single point resolution (~ 3 μm) and a precise time stamp (≤ 10 ns). In order to achieve this spatial resolution, small pixels (in the order of 20 μm pitch) must be used, together with the measurement of the charge deposition of neighbouring channels. Designing such small pixels requires the use of a deep downscaled CMOS technology. This note describes the design and characterisation of suitable building blocks implemented in a commercial 65 nm process. The characterisation included an evaluation of the radiation hardness of the blocks.
id cern-1443493
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2011
record_format invenio
spelling cern-14434932019-09-30T06:29:59Zhttp://cds.cern.ch/record/1443493engValerio, PBonacini, SBallabriga, RCampbell, MLlopart, XEvaluation of 65nm technology for CLIC pixel front-endParticle Physics - Experiment The CLIC vertex detector design requires a high single point resolution (~ 3 μm) and a precise time stamp (≤ 10 ns). In order to achieve this spatial resolution, small pixels (in the order of 20 μm pitch) must be used, together with the measurement of the charge deposition of neighbouring channels. Designing such small pixels requires the use of a deep downscaled CMOS technology. This note describes the design and characterisation of suitable building blocks implemented in a commercial 65 nm process. The characterisation included an evaluation of the radiation hardness of the blocks.LCD-Note-2011-022oai:cds.cern.ch:14434932011
spellingShingle Particle Physics - Experiment
Valerio, P
Bonacini, S
Ballabriga, R
Campbell, M
Llopart, X
Evaluation of 65nm technology for CLIC pixel front-end
title Evaluation of 65nm technology for CLIC pixel front-end
title_full Evaluation of 65nm technology for CLIC pixel front-end
title_fullStr Evaluation of 65nm technology for CLIC pixel front-end
title_full_unstemmed Evaluation of 65nm technology for CLIC pixel front-end
title_short Evaluation of 65nm technology for CLIC pixel front-end
title_sort evaluation of 65nm technology for clic pixel front-end
topic Particle Physics - Experiment
url http://cds.cern.ch/record/1443493
work_keys_str_mv AT valeriop evaluationof65nmtechnologyforclicpixelfrontend
AT bonacinis evaluationof65nmtechnologyforclicpixelfrontend
AT ballabrigar evaluationof65nmtechnologyforclicpixelfrontend
AT campbellm evaluationof65nmtechnologyforclicpixelfrontend
AT llopartx evaluationof65nmtechnologyforclicpixelfrontend