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Characterization of proton and neutron irradiated low resistivity p-on-n magnetic Czochralski ministrip sensors and diodes

Transient Current Technique (TCT) and Charge Collection Efficiency (CCE) measurements were performed on low resistivity (280@Wcm) n-bulk, p-readout magnetic Czochralski ministrip sensors and diodes. The detectors were irradiated with neutrons and 24GeV/c protons up to a total NIEL equivalent fluence...

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Autores principales: Pacifico, Nicola, Dolenc Kittelmann, Irena, Fahrer, Manuel, Moll, Michael, Militaru, Otilia
Publicado: 2011
Materias:
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2011.03.026
http://cds.cern.ch/record/1452944
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author Pacifico, Nicola
Dolenc Kittelmann, Irena
Fahrer, Manuel
Moll, Michael
Militaru, Otilia
author_facet Pacifico, Nicola
Dolenc Kittelmann, Irena
Fahrer, Manuel
Moll, Michael
Militaru, Otilia
author_sort Pacifico, Nicola
collection CERN
description Transient Current Technique (TCT) and Charge Collection Efficiency (CCE) measurements were performed on low resistivity (280@Wcm) n-bulk, p-readout magnetic Czochralski ministrip sensors and diodes. The detectors were irradiated with neutrons and 24GeV/c protons up to a total NIEL equivalent fluence of 8x10^1^5/cm^2. The study was addressed to assess the radiation tolerance of the detectors up to fluences expected in the next generations of High Energy Physics experiments. The charge collection efficiency after irradiation was found to be much higher than for standard FZ silicon p-in-n sensors. The underlying physics of this remarkable result was investigated by performing Edge-TCT measurements on one of the neutron irradiated ministrip sensors to extract detailed informations about the field and efficiency profiles of the detector.
id cern-1452944
institution Organización Europea para la Investigación Nuclear
publishDate 2011
record_format invenio
spelling cern-14529442019-09-30T06:29:59Zdoi:10.1016/j.nima.2011.03.026http://cds.cern.ch/record/1452944Pacifico, NicolaDolenc Kittelmann, IrenaFahrer, ManuelMoll, MichaelMilitaru, OtiliaCharacterization of proton and neutron irradiated low resistivity p-on-n magnetic Czochralski ministrip sensors and diodesDetectors and Experimental TechniquesEngineeringTransient Current Technique (TCT) and Charge Collection Efficiency (CCE) measurements were performed on low resistivity (280@Wcm) n-bulk, p-readout magnetic Czochralski ministrip sensors and diodes. The detectors were irradiated with neutrons and 24GeV/c protons up to a total NIEL equivalent fluence of 8x10^1^5/cm^2. The study was addressed to assess the radiation tolerance of the detectors up to fluences expected in the next generations of High Energy Physics experiments. The charge collection efficiency after irradiation was found to be much higher than for standard FZ silicon p-in-n sensors. The underlying physics of this remarkable result was investigated by performing Edge-TCT measurements on one of the neutron irradiated ministrip sensors to extract detailed informations about the field and efficiency profiles of the detector.oai:cds.cern.ch:14529442011
spellingShingle Detectors and Experimental Techniques
Engineering
Pacifico, Nicola
Dolenc Kittelmann, Irena
Fahrer, Manuel
Moll, Michael
Militaru, Otilia
Characterization of proton and neutron irradiated low resistivity p-on-n magnetic Czochralski ministrip sensors and diodes
title Characterization of proton and neutron irradiated low resistivity p-on-n magnetic Czochralski ministrip sensors and diodes
title_full Characterization of proton and neutron irradiated low resistivity p-on-n magnetic Czochralski ministrip sensors and diodes
title_fullStr Characterization of proton and neutron irradiated low resistivity p-on-n magnetic Czochralski ministrip sensors and diodes
title_full_unstemmed Characterization of proton and neutron irradiated low resistivity p-on-n magnetic Czochralski ministrip sensors and diodes
title_short Characterization of proton and neutron irradiated low resistivity p-on-n magnetic Czochralski ministrip sensors and diodes
title_sort characterization of proton and neutron irradiated low resistivity p-on-n magnetic czochralski ministrip sensors and diodes
topic Detectors and Experimental Techniques
Engineering
url https://dx.doi.org/10.1016/j.nima.2011.03.026
http://cds.cern.ch/record/1452944
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