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Avalanche effect in Si heavily irradiated detectors: Physical model and perspectives for application
The model explaining an enhanced collected charge in detectors irradiated to 10^1^5-10^1^6n_e_q/cm^2 is developed. This effect was first revealed in heavily irradiated n-on-p detectors operated at high bias voltage ranging from 900 to 1700V. The model is based on the fundamental effect of carrier av...
| Autores principales: | , , , , |
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| Publicado: |
2011
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2011.05.002 http://cds.cern.ch/record/1452946 |