Cargando…
Étude des détecteurs planaires pixels durcis aux radiations pour la mise à jour du détecteur de vertex d'ATLAS
In this work, is presented a study, using TCAD simulation, of the possible methods of designing of a planar pixel sensors by reducing their inactive area and improving their radiation hardness for use in the Insertable B-Layer (IBL) project and for SLHC upgrade phase for the ATLAS experiment. Differ...
Autor principal: | |
---|---|
Lenguaje: | eng |
Publicado: |
2012
|
Materias: | |
Acceso en línea: | http://cds.cern.ch/record/1474878 |
_version_ | 1780925490694979584 |
---|---|
author | Benoit, Mathieu |
author_facet | Benoit, Mathieu |
author_sort | Benoit, Mathieu |
collection | CERN |
description | In this work, is presented a study, using TCAD simulation, of the possible methods of designing of a planar pixel sensors by reducing their inactive area and improving their radiation hardness for use in the Insertable B-Layer (IBL) project and for SLHC upgrade phase for the ATLAS experiment. Different physical models available have been studied to develop a coherent model of radiation damage in silicon that can be used to predict silicon pixel sensor behavior after exposure to radiation. The Multi-Guard Ring Structure,a protection structure used in pixel sensor design was studied to obtain guidelines for the reduction of inactive edges detrimental to detector operation while keeping a good sensor behavior through its lifetime in the ATLAS detector. A campaign of measurement of the sensor's process parameters and electrical behavior to validate and calibrate the TCAD simulation models and results are also presented. A model for diode charge collection in highly irradiated environment was developed to explain the high charge collection observed in highly irradiated devices. A simple planar pixel sensor digitization model to be used in test beam and full detector system is detailed. It allows for easy comparison between experimental data and prediction by the various radiation damage models available. The digitizer has been validated using test beam data for unirradiated sensors and can be used to produce the first full scale simulation of the ATLAS detector with the IBL that include sensor effects such as slim edge and thinning of the sensor. |
id | cern-1474878 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2012 |
record_format | invenio |
spelling | cern-14748782019-09-30T06:29:59Zhttp://cds.cern.ch/record/1474878engBenoit, MathieuÉtude des détecteurs planaires pixels durcis aux radiations pour la mise à jour du détecteur de vertex d'ATLASDetectors and Experimental TechniquesIn this work, is presented a study, using TCAD simulation, of the possible methods of designing of a planar pixel sensors by reducing their inactive area and improving their radiation hardness for use in the Insertable B-Layer (IBL) project and for SLHC upgrade phase for the ATLAS experiment. Different physical models available have been studied to develop a coherent model of radiation damage in silicon that can be used to predict silicon pixel sensor behavior after exposure to radiation. The Multi-Guard Ring Structure,a protection structure used in pixel sensor design was studied to obtain guidelines for the reduction of inactive edges detrimental to detector operation while keeping a good sensor behavior through its lifetime in the ATLAS detector. A campaign of measurement of the sensor's process parameters and electrical behavior to validate and calibrate the TCAD simulation models and results are also presented. A model for diode charge collection in highly irradiated environment was developed to explain the high charge collection observed in highly irradiated devices. A simple planar pixel sensor digitization model to be used in test beam and full detector system is detailed. It allows for easy comparison between experimental data and prediction by the various radiation damage models available. The digitizer has been validated using test beam data for unirradiated sensors and can be used to produce the first full scale simulation of the ATLAS detector with the IBL that include sensor effects such as slim edge and thinning of the sensor.LAL-11-118oai:cds.cern.ch:14748782012-08-28T13:07:14Z |
spellingShingle | Detectors and Experimental Techniques Benoit, Mathieu Étude des détecteurs planaires pixels durcis aux radiations pour la mise à jour du détecteur de vertex d'ATLAS |
title | Étude des détecteurs planaires pixels durcis aux radiations pour la mise à jour du détecteur de vertex d'ATLAS |
title_full | Étude des détecteurs planaires pixels durcis aux radiations pour la mise à jour du détecteur de vertex d'ATLAS |
title_fullStr | Étude des détecteurs planaires pixels durcis aux radiations pour la mise à jour du détecteur de vertex d'ATLAS |
title_full_unstemmed | Étude des détecteurs planaires pixels durcis aux radiations pour la mise à jour du détecteur de vertex d'ATLAS |
title_short | Étude des détecteurs planaires pixels durcis aux radiations pour la mise à jour du détecteur de vertex d'ATLAS |
title_sort | étude des détecteurs planaires pixels durcis aux radiations pour la mise à jour du détecteur de vertex d'atlas |
topic | Detectors and Experimental Techniques |
url | http://cds.cern.ch/record/1474878 |
work_keys_str_mv | AT benoitmathieu etudedesdetecteursplanairespixelsdurcisauxradiationspourlamiseajourdudetecteurdevertexdatlas |