Characterization of the FE-I4B pixel readout chip production run for the ATLAS Insertable B-layer upgrade

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A production run of FE-I4 pixel readout chips (denominated FE-I4B) was submittedSeptember 2011 and first wafers were received in December. These chips are being usedto build the Insertable B-Layer upgrade for ATLAS, to be installed during the 2013-14shutdown. Results will be presented for detailed p...

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Detalles Bibliográficos
Autores principales: Barbero, M, Backhaus, M, Garcia-Sciveres, M, Pohl, D
Lenguaje:eng
Publicado: 2012
Materias:
Detectors and Experimental Techniques
Acceso en línea:http://cds.cern.ch/record/1483034
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author Barbero, M
Backhaus, M
Garcia-Sciveres, M
Pohl, D
author_facet Barbero, M
Backhaus, M
Garcia-Sciveres, M
Pohl, D
author_sort Barbero, M
collection CERN
description A production run of FE-I4 pixel readout chips (denominated FE-I4B) was submittedSeptember 2011 and first wafers were received in December. These chips are being usedto build the Insertable B-Layer upgrade for ATLAS, to be installed during the 2013-14shutdown. Results will be presented for detailed probing characterization of thesewafers, as well as measurements of chips on boards before and after irradiation.Based on these test results, the FE-I4B has been accepted for IBL production and thepower conditioning configuration, using on-chip voltage regulators, has beenfinalized.
id cern-1483034
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2012
record_format invenio
spelling cern-14830342019-09-30T06:29:59Zhttp://cds.cern.ch/record/1483034engBarbero, MBackhaus, MGarcia-Sciveres, MPohl, DCharacterization of the FE-I4B pixel readout chip production run for the ATLAS Insertable B-layer upgradeDetectors and Experimental TechniquesA production run of FE-I4 pixel readout chips (denominated FE-I4B) was submittedSeptember 2011 and first wafers were received in December. These chips are being usedto build the Insertable B-Layer upgrade for ATLAS, to be installed during the 2013-14shutdown. Results will be presented for detailed probing characterization of thesewafers, as well as measurements of chips on boards before and after irradiation.Based on these test results, the FE-I4B has been accepted for IBL production and thepower conditioning configuration, using on-chip voltage regulators, has beenfinalized.ATL-INDET-SLIDE-2012-540oai:cds.cern.ch:14830342012-10-04
spellingShingle Detectors and Experimental Techniques
Barbero, M
Backhaus, M
Garcia-Sciveres, M
Pohl, D
Characterization of the FE-I4B pixel readout chip production run for the ATLAS Insertable B-layer upgrade
title Characterization of the FE-I4B pixel readout chip production run for the ATLAS Insertable B-layer upgrade
title_full Characterization of the FE-I4B pixel readout chip production run for the ATLAS Insertable B-layer upgrade
title_fullStr Characterization of the FE-I4B pixel readout chip production run for the ATLAS Insertable B-layer upgrade
title_full_unstemmed Characterization of the FE-I4B pixel readout chip production run for the ATLAS Insertable B-layer upgrade
title_short Characterization of the FE-I4B pixel readout chip production run for the ATLAS Insertable B-layer upgrade
title_sort characterization of the fe-i4b pixel readout chip production run for the atlas insertable b-layer upgrade
topic Detectors and Experimental Techniques
url http://cds.cern.ch/record/1483034
work_keys_str_mv AT barberom characterizationofthefei4bpixelreadoutchipproductionrunfortheatlasinsertableblayerupgrade
AT backhausm characterizationofthefei4bpixelreadoutchipproductionrunfortheatlasinsertableblayerupgrade
AT garciasciveresm characterizationofthefei4bpixelreadoutchipproductionrunfortheatlasinsertableblayerupgrade
AT pohld characterizationofthefei4bpixelreadoutchipproductionrunfortheatlasinsertableblayerupgrade

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