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BCM Detector Performance Plots showing radiation damage to diamond sensors based on leakage current measurements and fluka simulations
The Beam Condition Monitor (BCM) of the CMS detector at the LHC is a protection device similar to the LHC Beam Loss Monitor system. While the electronics used is the same, poly-crystalline Chemical Vapor Deposition (pCVD) diamonds are used instead of ionization chambers as the BCM sensor material. T...
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Lenguaje: | eng |
Publicado: |
2012
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Materias: | |
Acceso en línea: | http://cds.cern.ch/record/1503494 |
Sumario: | The Beam Condition Monitor (BCM) of the CMS detector at the LHC is a
protection device similar to the LHC Beam Loss Monitor system. While the
electronics used is the same, poly-crystalline Chemical Vapor Deposition
(pCVD) diamonds are used instead of ionization chambers as the BCM
sensor material. The main purpose of the system is the protection of the
silicon Pixel and Strip tracking detectors by inducing a beam dump, if the
beam losses are too high in the CMS detector.
By comparing the detector current with the instantaneous luminosity, the BCM
detector efficiency can be monitored. Over the LHC running period thus far, a
reduction in signal strength has been observed. An explanation for this effect
will be discussed in this paper, depending on the sensor type and location in
CMS.
The number of radiation-induced defects in the bulk material, reduces the
average drift length (CCD) of the charge, and hence lowers the signal. The
number of these induced defects can be simulated using FLUKA monte-carlo.
The cross section for creating defects increases with decreasing energies of
the impinging particles. This explains, why diamond sensors mounted close to
heavy calorimeters experience more radiation damage, owing to the high
number of low energy neutrons produced in these regions. The signal
decrease was stronger than expected from the number of simulated defects.
Here polarization from trapped charge carriers in the defects is a likely
candidate for explaining the difference, as suggested by Transient Current
Technique (TCT) measurements. With increasing trap density charge carriers
get more frequently trapped, forming a corresponding increase in local
polarization effects. Mounted at the same location, the single-crystalline
(sCVD) diamond sensor shows a faster relative signal decrease than the
pCVD sensor. This is expected, since the relative increase in the number of
defects is larger in sCVD than in pCVD sensors. |
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