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Epitaxy of Semiconductors: Introduction to Physical Principles

Introduction to Epitaxy provides the essential information for a comprehensive upper-level graduate course treating the crystalline growth of semiconductor heterostructures. Heteroepitaxy represents the basis of advanced electronic and optoelectronic devices today and is considered one of the top fi...

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Detalles Bibliográficos
Autor principal: Pohl, Udo W
Lenguaje:eng
Publicado: Springer 2013
Materias:
Acceso en línea:https://dx.doi.org/10.1007/978-3-642-32970-8
http://cds.cern.ch/record/1517912
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author Pohl, Udo W
author_facet Pohl, Udo W
author_sort Pohl, Udo W
collection CERN
description Introduction to Epitaxy provides the essential information for a comprehensive upper-level graduate course treating the crystalline growth of semiconductor heterostructures. Heteroepitaxy represents the basis of advanced electronic and optoelectronic devices today and is considered one of the top fields in materials research. The book covers the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and the description of the major growth techniques metalorganic vapor phase epitaxy, molecular beam epitaxy and liquid phase epitaxy. Cubic semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures and processes during nucleation and growth are treated in detail. The Introduction to Epitaxy requires only little knowledge on solid-state physics. Students of natural sciences, materials science and electrical engineering as well as their lecturers benefit from elementary introductions to theory and practice of epitaxial growth, supported by pertinent references and over 200 detailed illustrations.
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spelling cern-15179122021-04-21T23:16:27Zdoi:10.1007/978-3-642-32970-8http://cds.cern.ch/record/1517912engPohl, Udo WEpitaxy of Semiconductors: Introduction to Physical PrinciplesEngineeringIntroduction to Epitaxy provides the essential information for a comprehensive upper-level graduate course treating the crystalline growth of semiconductor heterostructures. Heteroepitaxy represents the basis of advanced electronic and optoelectronic devices today and is considered one of the top fields in materials research. The book covers the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and the description of the major growth techniques metalorganic vapor phase epitaxy, molecular beam epitaxy and liquid phase epitaxy. Cubic semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures and processes during nucleation and growth are treated in detail. The Introduction to Epitaxy requires only little knowledge on solid-state physics. Students of natural sciences, materials science and electrical engineering as well as their lecturers benefit from elementary introductions to theory and practice of epitaxial growth, supported by pertinent references and over 200 detailed illustrations.Springeroai:cds.cern.ch:15179122013
spellingShingle Engineering
Pohl, Udo W
Epitaxy of Semiconductors: Introduction to Physical Principles
title Epitaxy of Semiconductors: Introduction to Physical Principles
title_full Epitaxy of Semiconductors: Introduction to Physical Principles
title_fullStr Epitaxy of Semiconductors: Introduction to Physical Principles
title_full_unstemmed Epitaxy of Semiconductors: Introduction to Physical Principles
title_short Epitaxy of Semiconductors: Introduction to Physical Principles
title_sort epitaxy of semiconductors: introduction to physical principles
topic Engineering
url https://dx.doi.org/10.1007/978-3-642-32970-8
http://cds.cern.ch/record/1517912
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