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Lattice location study of ion implanted Sn and Sn-related defects in Ge
In this work, we present a lattice location study of Sn in Ge. From emission channeling experiments, we determined the exact lattice location of ion implanted $^{121}$Sn atoms and compared the results to predictions from density-functional calculations. The majority of the Sn atoms are positioned on...
| Autores principales: | , , , , |
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| Lenguaje: | eng |
| Publicado: |
2010
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1103/PhysRevB.81.155204 http://cds.cern.ch/record/1522418 |