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Direct identification of interstitial Mn in heavily p-type doped GaAs and evidence of its high thermal stability
We report on the lattice location of Mn in heavily p-type doped GaAs by means of $\beta^{-}$-emission channeling from the decay of $^{56}$Mn. The majority of the Mn atoms substitute for Ga and up to 31% occupy the tetrahedral interstitial site with As nearest neighbors. Contrary to the general belie...
| Autores principales: | , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2011
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/1523750 |
| _version_ | 1780929252905975808 |
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| author | Pereira, LMC Wahl, U Correia, JG Decoster, S da Silva, MR Araújo, JP Vantomme, A |
| author_facet | Pereira, LMC Wahl, U Correia, JG Decoster, S da Silva, MR Araújo, JP Vantomme, A |
| author_sort | Pereira, LMC |
| collection | CERN |
| description | We report on the lattice location of Mn in heavily p-type doped GaAs by means of $\beta^{-}$-emission channeling from the decay of $^{56}$Mn. The majority of the Mn atoms substitute for Ga and up to 31% occupy the tetrahedral interstitial site with As nearest neighbors. Contrary to the general belief, we find that interstitial Mn is immobile up to 400$^{\circ}$C, with an activation energy for diffusion of 1.7–2.3 eV. Such high thermal stability of interstitial Mn has significant implications on the strategies and prospects for achieving room temperature ferromagnetism in Ga$_{1−x}$Mn$_{x}$As. |
| id | cern-1523750 |
| institution | Organización Europea para la Investigación Nuclear |
| language | eng |
| publishDate | 2011 |
| record_format | invenio |
| spelling | cern-15237502019-09-30T06:29:59Zhttp://cds.cern.ch/record/1523750engPereira, LMCWahl, UCorreia, JGDecoster, Sda Silva, MRAraújo, JPVantomme, ADirect identification of interstitial Mn in heavily p-type doped GaAs and evidence of its high thermal stabilityCondensed MatterWe report on the lattice location of Mn in heavily p-type doped GaAs by means of $\beta^{-}$-emission channeling from the decay of $^{56}$Mn. The majority of the Mn atoms substitute for Ga and up to 31% occupy the tetrahedral interstitial site with As nearest neighbors. Contrary to the general belief, we find that interstitial Mn is immobile up to 400$^{\circ}$C, with an activation energy for diffusion of 1.7–2.3 eV. Such high thermal stability of interstitial Mn has significant implications on the strategies and prospects for achieving room temperature ferromagnetism in Ga$_{1−x}$Mn$_{x}$As.CERN-OPEN-2013-009oai:cds.cern.ch:15237502011-05-18 |
| spellingShingle | Condensed Matter Pereira, LMC Wahl, U Correia, JG Decoster, S da Silva, MR Araújo, JP Vantomme, A Direct identification of interstitial Mn in heavily p-type doped GaAs and evidence of its high thermal stability |
| title | Direct identification of interstitial Mn in heavily p-type doped GaAs and evidence of its high thermal stability |
| title_full | Direct identification of interstitial Mn in heavily p-type doped GaAs and evidence of its high thermal stability |
| title_fullStr | Direct identification of interstitial Mn in heavily p-type doped GaAs and evidence of its high thermal stability |
| title_full_unstemmed | Direct identification of interstitial Mn in heavily p-type doped GaAs and evidence of its high thermal stability |
| title_short | Direct identification of interstitial Mn in heavily p-type doped GaAs and evidence of its high thermal stability |
| title_sort | direct identification of interstitial mn in heavily p-type doped gaas and evidence of its high thermal stability |
| topic | Condensed Matter |
| url | http://cds.cern.ch/record/1523750 |
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