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Direct identification of interstitial Mn in heavily p-type doped GaAs and evidence of its high thermal stability
We report on the lattice location of Mn in heavily p-type doped GaAs by means of $\beta^{-}$-emission channeling from the decay of $^{56}$Mn. The majority of the Mn atoms substitute for Ga and up to 31% occupy the tetrahedral interstitial site with As nearest neighbors. Contrary to the general belie...
| Autores principales: | , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2011
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/1523750 |