Direct identification of interstitial Mn in heavily p-type doped GaAs and evidence of its high thermal stability

We report on the lattice location of Mn in heavily p-type doped GaAs by means of $\beta^{-}$-emission channeling from the decay of $^{56}$Mn. The majority of the Mn atoms substitute for Ga and up to 31% occupy the tetrahedral interstitial site with As nearest neighbors. Contrary to the general belie...

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Detalles Bibliográficos
Autores principales: Pereira, LMC, Wahl, U, Correia, JG, Decoster, S, da Silva, MR, Araújo, JP, Vantomme, A
Lenguaje:eng
Publicado: 2011
Materias:
Condensed Matter
Acceso en línea:http://cds.cern.ch/record/1523750

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