Lattice position and thermal stability of diluted As in Ge

We present a lattice location study of the n-type dopant arsenic after ion implantation into germanium. By means of electron emission channeling experiments, we have observed that the implanted As atoms substitute the Ge host atoms. However, in contrast to several implanted metal impurities in Ge, n...

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Detalles Bibliográficos
Autores principales: Decoster, S, Wahl, U, Cottenier, S, Correia, JG, Mendonça, T, Amorim, LM, Pereira, LMC, Vantomme, A
Lenguaje:eng
Publicado: 2012
Materias:
Condensed Matter
Acceso en línea:http://cds.cern.ch/record/1524191
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author Decoster, S
Wahl, U
Cottenier, S
Correia, JG
Mendonça, T
Amorim, LM
Pereira, LMC
Vantomme, A
author_facet Decoster, S
Wahl, U
Cottenier, S
Correia, JG
Mendonça, T
Amorim, LM
Pereira, LMC
Vantomme, A
author_sort Decoster, S
collection CERN
description We present a lattice location study of the n-type dopant arsenic after ion implantation into germanium. By means of electron emission channeling experiments, we have observed that the implanted As atoms substitute the Ge host atoms. However, in contrast to several implanted metal impurities in Ge, no significant fraction of As is found on interstitial sites. The substitutional As impurities are found to be thermally stable up to 600°C. After 700°C annealing a strong reduction of emission channeling effects was observed, in full accordance with the expected diffusion-induced broadening of the As profile.
id cern-1524191
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2012
record_format invenio
spelling cern-15241912019-09-30T06:29:59Zhttp://cds.cern.ch/record/1524191engDecoster, SWahl, UCottenier, SCorreia, JGMendonça, TAmorim, LMPereira, LMCVantomme, ALattice position and thermal stability of diluted As in GeCondensed MatterWe present a lattice location study of the n-type dopant arsenic after ion implantation into germanium. By means of electron emission channeling experiments, we have observed that the implanted As atoms substitute the Ge host atoms. However, in contrast to several implanted metal impurities in Ge, no significant fraction of As is found on interstitial sites. The substitutional As impurities are found to be thermally stable up to 600°C. After 700°C annealing a strong reduction of emission channeling effects was observed, in full accordance with the expected diffusion-induced broadening of the As profile.CERN-OPEN-2013-011oai:cds.cern.ch:15241912012-03-09
spellingShingle Condensed Matter
Decoster, S
Wahl, U
Cottenier, S
Correia, JG
Mendonça, T
Amorim, LM
Pereira, LMC
Vantomme, A
Lattice position and thermal stability of diluted As in Ge
title Lattice position and thermal stability of diluted As in Ge
title_full Lattice position and thermal stability of diluted As in Ge
title_fullStr Lattice position and thermal stability of diluted As in Ge
title_full_unstemmed Lattice position and thermal stability of diluted As in Ge
title_short Lattice position and thermal stability of diluted As in Ge
title_sort lattice position and thermal stability of diluted as in ge
topic Condensed Matter
url http://cds.cern.ch/record/1524191
work_keys_str_mv AT decosters latticepositionandthermalstabilityofdilutedasinge
AT wahlu latticepositionandthermalstabilityofdilutedasinge
AT cotteniers latticepositionandthermalstabilityofdilutedasinge
AT correiajg latticepositionandthermalstabilityofdilutedasinge
AT mendoncat latticepositionandthermalstabilityofdilutedasinge
AT amorimlm latticepositionandthermalstabilityofdilutedasinge
AT pereiralmc latticepositionandthermalstabilityofdilutedasinge
AT vantommea latticepositionandthermalstabilityofdilutedasinge

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