Lattice position and thermal stability of diluted As in Ge

We present a lattice location study of the n-type dopant arsenic after ion implantation into germanium. By means of electron emission channeling experiments, we have observed that the implanted As atoms substitute the Ge host atoms. However, in contrast to several implanted metal impurities in Ge, n...

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Detalles Bibliográficos
Autores principales: Decoster, S, Wahl, U, Cottenier, S, Correia, JG, Mendonça, T, Amorim, LM, Pereira, LMC, Vantomme, A
Lenguaje:eng
Publicado: 2012
Materias:
Condensed Matter
Acceso en línea:http://cds.cern.ch/record/1524191

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