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Evidence of N substitution by Mn in GaN

We report on the lattice location of Mn in wurtzite GaN using beta− emission channeling. In addition to the majority substituting for Ga, we locate up to 20% of the Mn atoms in N sites. We propose that the incorporation of Mn in N sites is enabled under sufficiently high concentrations of N vacancie...

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Detalles Bibliográficos
Autores principales: Pereira, LMC, Wahl, U, Decoster, S, Correia, JG, da Silva, MR, Vantomme, A, Araújo, JP
Lenguaje:eng
Publicado: 2013
Materias:
Acceso en línea:https://dx.doi.org/10.1103/PhysRevB.86.195202
http://cds.cern.ch/record/1524194
Descripción
Sumario:We report on the lattice location of Mn in wurtzite GaN using beta− emission channeling. In addition to the majority substituting for Ga, we locate up to 20% of the Mn atoms in N sites. We propose that the incorporation of Mn in N sites is enabled under sufficiently high concentrations of N vacancies, and stabilized by a highly charged state of the Mn cations. Since N substitution by Mn impurities in wurtzite GaN has never been observed experimentally or even considered theoretically before, it challenges the current paradigm of transition metal incorporation in wide-gap dilute magnetic semiconductors.