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Optimisation of CMOS pixel sensors for high performance vertexing and tracking

CMOS Pixel Sensors tend to become relevant for a growing spectrum of charged particle detection instruments. This comes mainly from their high granularity and low material budget. However, several potential applications require a higher read-out speed and radiation tolerance than those achieved with...

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Detalles Bibliográficos
Autores principales: Baudot, Jérôme, Besson, Auguste, Claus, Gilles, Dulinski, Wojciech, Dorokhov, Andrei, Goffe, Mathieu, Hu-Guo, Christine, Molnar, Levente, Sanchez-Castro, Xitzel, Senyukov, Serhiy, Winter, Marc
Lenguaje:eng
Publicado: 2013
Materias:
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2013.06.101
http://cds.cern.ch/record/1545495
Descripción
Sumario:CMOS Pixel Sensors tend to become relevant for a growing spectrum of charged particle detection instruments. This comes mainly from their high granularity and low material budget. However, several potential applications require a higher read-out speed and radiation tolerance than those achieved with available devices based on a 0.35 micrometers feature size technology. This paper shows preliminary test results of new prototype sensors manufactured in a 0.18 micrometers process based on a high resistivity epitaxial layer of sizeable thickness. Grounded on these observed performances, we discuss a development strategy over the coming years to reach a full scale sensor matching the specifications of the upgraded version of the Inner Tracking System (ITS) of the ALICE experiment at CERN, for which a sensitive area of up to about 10 square meters may be equipped with pixel sensors.