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Fundamentals of nanoscaled field effect transistors
Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully expl...
Autor principal: | Chaudhry, Amit |
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Lenguaje: | eng |
Publicado: |
Springer
2013
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1007/978-1-4614-6822-6 http://cds.cern.ch/record/1551998 |
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